Zobrazeno 1 - 1
of 1
pro vyhledávání: '"David Lee Wyman"'
High Etch-Resistant Silicon Containing Bilayer Resist:-Lithographic Performance & Outgassing Studies
Autor:
Eric Scott Moyer, Takahashi Hosono, Daisuke Kawana, Kazufumi Sato, Sunlin Hu, Sina Maghoodi, David Lee Wyman, Tomotaka Yamada, Ronald E. Tecklenburg
Publikováno v:
Journal of Photopolymer Science and Technology. 18:365-372
Highly etch resistant poly(silsesquioxane) based resists for ArF lithographic application have been developed. This paper reports on the development of a high etch resistant, high glass transition temperature bilayer resist system capable of imaging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e0aa0fdd71f52edac33ba4ce842051
https://doi.org/10.2494/photopolymer.18.365
https://doi.org/10.2494/photopolymer.18.365
