Zobrazeno 1 - 10
of 21
pro vyhledávání: '"David L. Willenborg"'
Publikováno v:
Journal of Applied Physics. 73:7035-7040
Beam‐profile reflectometry is a new technique for measuring the thickness and optical constants of dielectric, semiconducting, and thin metal films. The technique consists of measuring the intensity profile of a highly focused beam reflected from t
Publikováno v:
Applied optics. 21(10)
The interferometer and viewing optics that are the main optical components of an automated surface mapping system used to characterize the surface topography and the wall thickness uniformity of opaque and transparent spherical shells are described.
Publikováno v:
Applied Physics Letters. 60:1301-1303
We describe a new technique for measuring the thickness and optical constants of dielectric, semiconducting, and thin metal films. Beam profile reflectometry provides excellent precision for films as thin as 30 A and as thick as 20 000 A. The techniq
Publikováno v:
SPIE Proceedings.
We have developed a novel technique for performing simple phase-sensitive optical measurements in a sub-micrometer area. We presently use this technique to measure film stacks commonly found in the semiconductor industry. This article explains the th
Autor:
Jeffrey T. Fanton, Jim P. Simmons, Allan Rosencwaig, Jon Opsal, S. M. Kelso, David L. Willenborg
Publikováno v:
SPIE Proceedings.
Measurements of ultra-thin films (
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 21:537-541
Thermal wave technology has led to a new means of monitoring the dose and dose uniformity of ions implanted into wafers of silicon and gallium arsenide. New monitoring characteristics made available with this technique include nondestructive real-tim
Publikováno v:
Le Journal de Physique Colloques. 44:C6-483
Technique nouvelle de deflexion d'un faisceau laser induite par une onde thermique permettant de mesurer des epaisseurs de couches opaques ou transparentes de 500 a 25000 A. Application a la mesure des epaisseurs de couches minces de Al ou SiO 2 depo
Publikováno v:
Applied Physics Letters. 47:584-586
A new method, based on thermal wave technology, is used to monitor the ion implantation process in silicon. It is a noncontact, nondestructive technique that requires no special sample preparation or processing, has high sensitivity even at low dose,
Publikováno v:
Applied Physics Letters. 43:166-168
A method and apparatus for thin film thickness measurements with thermal waves in which heating and detection laser beams are focused onto the film, normal to the surface of the film, with the two beams parallel and non-coaxial.
Publikováno v:
IEEE Journal of Quantum Electronics. 17:2416-2418
The interferometer and viewing optics that are the main optical components of an Automated Surface Mapping system (ASM) used to characterize the surface topography and the wall thickness uniformity of opaque and transparent spherical shells is descri