Zobrazeno 1 - 10
of 29
pro vyhledávání: '"David L. Rath"'
Autor:
Balasubramanian S. Pranatharthi Haran, B. Peethala, Kedari Matam, Kisik Choi, Nicholas A. Lanzillo, J. Casey, L. Chang, Terry A. Spooner, D. Janes, David L. Rath, Benjamin D. Briggs, Donald F. Canaperi, M. Packiam, Devika Sil, Hosadurga Shobha, Ryan Kevin J
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
The Fully aligned via scheme (FAV) is known to mitigate the via misalignment issues that drive a lower Vmax and limits the contact area between the via and the underlying line. Even though the overall benefits of FAV are well known, the key detractor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b62de6222fd8be5e825a22aeea8b864c
https://doi.org/10.1109/iitc51362.2021.9537484
https://doi.org/10.1109/iitc51362.2021.9537484
Autor:
Paul S. McLaughlin, Thomas J. Haigh, Devika Sil, Huai Huang, Nicholas A. Lanzillo, Raghuveer R. Patlolla, Pranita Kerber, Hosadurga Shobha, James Chingwei Li, C. B. Pcethala, Yongan Xu, Donald F. Canaperi, James J. Demarest, Elbert E. Huang, Chanro Park, Clevenger Leigh Anne H, Benjamin D. Briggs, Licausi Nicholas, Jae Gon Lee, M. Ali, Son Nguyen, Young-Wug Kim, Theodorus E. Standaert, C. T. Le, G. Lian, Griselda Bonilla, Errol Todd Ryan, Han You, David L. Rath
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
As BEOL pitch continues to aggressively scale, contributions from pattern dimension and edge placement constrict the available geometry of interconnects. In particular, the critical minimum insulator spacing which defines a technologies max operating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1274e1c098e6a464c29d7db0ba284e69
https://doi.org/10.1109/iitc.2018.8430476
https://doi.org/10.1109/iitc.2018.8430476
Autor:
Yongan Xu, Peethala Cornelius Brown, Hosadurga Shobha, Chanro Park, Huai Huang, Devika Sil, Pranita Kerber, Raghuveer R. Patlolla, David L. Rath, Clevenger Leigh Anne H, M. Ali, James Chingwei Li, Jae Gon Lee, Paul S. McLaughlin, Benjamin D. Briggs, Thomas J. Haigh, C. T. Le, G. Lian, Theodorus E. Standaert, Son Nguyen, Nicholas A. Lanzillo, Licausi Nicholas, Donald F. Canaperi, Elbert E. Huang, Errol Todd Ryan, Han You, Griselda Bonilla, James J. Demarest, Young-Wug Kim
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
A fully aligned via (FAV) integration scheme is introduced and demonstrated at 36 nm metal pitch, with extendibility to beyond the 7 nm node. Selective chemistries were developed to recess Cu and W wires and their associated barrier liner materials,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f8dc8cee4ebcaca4c79a7edeb4570c
https://doi.org/10.1109/iedm.2017.8268388
https://doi.org/10.1109/iedm.2017.8268388
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
Experimental decomposition of contributions of electron scattering events in deeply scaled interconnects has been complicated by the fact that grain size and line dimensions are generally not varied independently. In this paper, we describe a combina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25111cd0a5d9fd925b87a85038ad4d6f
https://doi.org/10.1109/iitc-amc.2017.7968975
https://doi.org/10.1109/iitc-amc.2017.7968975
Autor:
Sandra G. Malhotra, Sean P. E. Smith, Lynne Gignac, Shyng-Tsong Chen, Judith M. Rubino, Darryl D. Restaino, David L. Rath, Steffen K. Kaldor, Wei-Tsu Tseng, Mahadevaiyer Krishnan, Eric G. Liniger, Chao-Kun Hu, James R. Lloyd, Robert Rosenberg, Donald F. Canaperi, Soon-Cheon Seo, A. Simon
Publikováno v:
Thin Solid Films. 504:274-278
Electromigration mass flow in Cu damascene lines which were connected to W blocking barrier contacts and were capped with either a CoWP, Ta, Ta/TaN, Pd, SiN x , or SiC x N y H z layer was investigated. Cu lines, fabricated with body centered cubic α
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::841c6856f1ec24ac822762c5298e94ad
https://doi.org/10.1016/j.tsf.2005.09.161
https://doi.org/10.1016/j.tsf.2005.09.161
Autor:
David L. Rath, Da Song, S. S. Iyer, Wei Lin, Daniel C. Edelstein, Joseph Washington, Kevin R. Winstel, Juntao Li, James J. Demarest, Spyridon Skordas, B. Peethala, Toshiaki Kirihata
Publikováno v:
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
A novel hybrid bonding process has been developed that achieved a successful copper/SiO 2 heterogeneous bonding.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff1b5dd4f84fcf691164cce2c0f5d49
https://doi.org/10.1109/ltb-3d.2014.6886145
https://doi.org/10.1109/ltb-3d.2014.6886145
Autor:
David L. Rath, Rainer Florian Schnabel, T. Joseph, Kenneth P. Rodbell, Lynne Gignac, R. G. Filippi, X.J Ning, Chenming Hu, Gregory Costrini, Timothy D. Sullivan, Stefan Weber, G. Stojakovic, Lawrence A. Clevenger, Edward W. Kiewra, Roy C. Iggulden, M. Gribelyuk, R.V.S.S.N. Ravikumar, T. Kane, Jeff Gambino
Publikováno v:
Thin Solid Films. 388:303-314
The electromigration behavior and microstructural features of AlCu Dual Damascene lines are compared to those of AlCu metal reactively ion etched (RIE) lines. Test structures consist of 0.18-, 0.35- and 1.33-μm-wide lines terminated by W diffusion b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b7bc07472d1937181aff8531c7f159a
https://doi.org/10.1016/s0040-6090(01)00855-0
https://doi.org/10.1016/s0040-6090(01)00855-0
Autor:
B.N. Rhoads, G. Stojakovic, D.D. Miura, F. Schnabel, David L. Rath, Jeffrey P. Gambino, Ronald G. Filippi, Edward W. Kiewra, R.V.S.S.N. Ravikumar, Kenneth J. McCullough, D.J. Delehanty
Publikováno v:
Solid State Phenomena. :51-54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c85df0cbd18a277a8fc08ebd043251e
https://doi.org/10.4028/www.scientific.net/ssp.76-77.51
https://doi.org/10.4028/www.scientific.net/ssp.76-77.51
Autor:
Kenneth J. McCullough, E.W. Kiewra, D.D. Miura, B.N. Rhoads, G. Stojakovic, R.V.S.S.N. Ravikumar, Ronald G. Filippi, David L. Rath, D.J. Delehanty
Publikováno v:
Solid State Phenomena. :31-34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c73d459ec13e65e5afb5fc7b5805c51
https://doi.org/10.4028/www.scientific.net/ssp.76-77.31
https://doi.org/10.4028/www.scientific.net/ssp.76-77.31
Autor:
X. Zhang, Hosadurga Shobha, C. Parks, Ming He, X. Lin, Donald F. Canaperi, A. Simon, Anita Madan, James Chingwei Li, Raghuveer R. Patlolla, Kunaljeet Tanwar, Daniel C. Edelstein, J. Maniscalco, Oscar van der Straten, Philip L. Flaitz, Mahadevaiyer Krishnan, Christopher J. Penny, James J. Kelly, David L. Rath, Chenming Hu, Terry A. Spooner, Takeshi Nogami, Tibor Bolom
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
In studying integrated dual damascene hardware at 10 nm node dimensions, we identified the mechanism for Co liner enhancement of Cu gap-fill to be a wetting improvement of the PVD Cu seed, rather than a local nucleation enhancement for Cu plating. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95a5fa2e9ef1fbefa9504d9b2ac43a7e
https://doi.org/10.1109/iitc.2013.6615592
https://doi.org/10.1109/iitc.2013.6615592