Zobrazeno 1 - 10
of 19
pro vyhledávání: '"David L. Adler"'
Publikováno v:
Physics Procedia. 1(1):485-504
Publikováno v:
Surface Science. 601:4733-4741
Novel electron-optical components and concepts aiming at improving the throughput and extending the applications of a low energy electron microscope (LEEM) have been developed. An immersion magnetic objective lens can substantially reduce e–e inter
Publikováno v:
Scanning. 25:300-308
We present a three-dimensional simulation of scanning electron microscope (SEM) images and surface charging. First, the field above the sample is calculated using Laplace's equation with the proper boundary conditions; then, the simulation algorithm
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 519:242-250
Scanning electron microscope (SEM) based CD control and wafer inspection has an increasingly active role in the semiconductor industry. Current design rules require a CD control with a precision in the nanometer range. In order to achieve this precis
Autor:
Michael S. Nashner, Ralph G. Nuzzo, David L. Adler, Philip D. Lane, David M. Somerville, and John R. Shapley
Publikováno v:
Journal of the American Chemical Society. 118:12964-12974
A set of supported bimetallic catalysts, designated [Re7Ir−N], [Re7Ir−P], [Re5IrRe2−N], and [Re5IrRe2−P], has been prepared from two structural isomers (1 and 2) of the cluster compound [Z]2[Re7IrC(CO)23] (Z+ = NEt4+, N(PPh3)2+) by deposition
Publikováno v:
SPIE Proceedings.
SEM based CD control and wafer inspection has an increasingly active role in the semiconductor industry. Current design rules require a CD control with a precision in the nanometer range. In order to achieve this precision, a complete model of the im
Publikováno v:
SPIE Proceedings.
High resolution inspection and metrology is an important part of current semiconductor technology and has an increasingly active role as miniaturization is pushed beyond 200 nm. Current and future semiconductor design rules require not only high reso
Publikováno v:
AIP Conference Proceedings.
We have performed a Diffraction Anomalous Fine Structure (DAFS) study of a single crystal of the relaxor ferroelectric PbMg1/3Nb2/3O3. DAFS measurements were performed at the Nb K edge on a half-order Bragg reflection originating from the 1:1 ordered
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:2425
The Monte Carlo method is widely used to simulate the signal from a scanning electron microscope. Although the results closely match the actual signal, the method is inherently slow due to the repeated calculation of random trajectories. The authors
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:3399
Low voltage scanning electron microscopy (SEM) metrology and inspection are performed by immersing the sample in an electric field; under this condition, when a scanning electron beam images a sample containing insulating features (like oxides and re