Zobrazeno 1 - 3
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pro vyhledávání: '"David Khomasuridze"'
Autor:
David Khomasuridze, N. Kekelidze, L. Milovanova, David Kekelidze, E. Khutsishvili, Z. Davitaya, B. Kvirkvelia
Publikováno v:
Acta Physica Polonica A. 121:27-29
The parameters of potential well, which arises around inhomogeneities of technological origin in n-InP, have been analyzed using electrical measurements data. Model of spherical space-charge regions surrounding disordered regions was applied for expl
Autor:
E. Khutsishvili, B. Kvirkvelia, David Kekelidze, Vugar Aliyev, Leonti Gabrichidze, Zurab Guguchia, N. Kekelidze, David Khomasuridze
Publikováno v:
AIP Conference Proceedings.
We have studied the low temperature charge carriers mobility in bulk single crystals of InAs- and InP- rich InAs-InP solid solutions irradiated with maximum integral flux 2⋅1018 n/cm2 of fast neutrons. Influence of minor component small addition in
Autor:
Nodar Kekelidze, Elza Khutsishvili, David Khomasuridze, Bella Kvirkvelia, Leonti Gabrichidze, Nana Kobulashvili, Muhammed Hasan Aslan, Ahmet Yayuz Oral, Mehmet Özer, Süleyman Hikmet Çaglar
Publikováno v:
AIP Conference Proceedings.
Electrical properties of n‐type crystals of indium phosphide in the temperature range 4.2–300 K have been investigated. Comparison of experimental and theoretical data of carriers mobility has shown, that current carriers scattering on the neutra