650 V SiC Trench MOSFET for high-efficiency power supplies

Autor: Thomas Aichinger, Ralf Siemieniec, Wolfgang Jantscher, Rene Mente, Ute Wenzel, David Kammerlander

Publikováno v: 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe).

This work introduces a new SiC Trench MOSFET technology with 650 V nominal blocking voltage. The technology is tailored to address the needs of power supplies in the power range from several hundred watts to some tens of kilowatts including server an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ddbb2856dbfdc9b35489b3c73b1c0a7f
https://doi.org/10.23919/epe.2019.8915154

Optimization of the ionization time of an atom with tailored laser pulses: a theoretical study

Autor: Andrea Castro, Miguel A. L. Marques, David Kammerlander

Publikováno v: Zaguán. Repositorio Digital de la Universidad de Zaragoza
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How fast can a laser pulse ionize an atom? We address this question by considering pulses that carry a fixed time-integrated energy per-area, and finding those that achieve the double requirement of maximizing the ionization that they induce, while h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7c7ebcfd920c2714286f2a2a1f7496a

Speeding up the solution of the Bethe-Salpeter equation by a double-grid method and Wannier interpolation

Autor: Silvana Botti, Claudio Attaccalite, Miguel A. L. Marques, David Kammerlander, Andrea Marini

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (12), pp.125203. ⟨10.1103/PhysRevB.86.125203⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2012, 86 (12), pp.125203. ⟨10.1103/PhysRevB.86.125203⟩
Physical review. B, Condensed matter and materials physics 86 (2012): 125203. doi:10.1103/PhysRevB.86.125203
info:cnr-pdr/source/autori:David Kammerlander, Silvana Botti, Miguel A. L Marques, Andrea Marini, Claudio Attaccalite/titolo:Speeding up the solution of the Bethe-Salpeter equation by a double-grid method and Wannier interpolation/doi:10.1103%2FPhysRevB.86.125203/rivista:Physical review. B, Condensed matter and materials physics/anno:2012/pagina_da:125203/pagina_a:/intervallo_pagine:125203/volume:86

The Bethe-Salpeter equation is a widely used approach to describe optical excitations in bulk semiconductors. It leads to spectra that are in very good agreement with experiment, but the price to pay for such accuracy is a very high computational bur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae3271d20e30cad9ef6a87f9f3323863
http://arxiv.org/abs/1209.1509

Semiconductor quantum tubes: dielectric modulation and excitonic response

Autor: Guido Goldoni, Filippo Troiani, David Kammerlander

Publikováno v: (2010).
info:cnr-pdr/source/autori:Kammerlander D., F. Troiani and G. Goldoni/titolo:Semiconductor quantum tubes: Dielectric modulation and excitonic response/doi:/rivista:/anno:2010/pagina_da:/pagina_a:/intervallo_pagine:/volume

We study theoretically the optical properties of quantum tubes, one-dimensional semiconductor nanostructures where electrons and holes are confined to a cylindrical shell. In these structures, which bridge between 2D and 1D systems, the electron-hole

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::332282961cbeec5a38618f09d83dfceb

Biexciton stability in carbon nanotubes

Autor: Guido Goldoni, Deborah Prezzi, Elisa Molinari, David Kammerlander, Ulrich Hohenester

Publikováno v: Physical review letters
99 (2007): 126806. doi:10.1103/PhysRevLett.99.126806
info:cnr-pdr/source/autori:Kammerlander, D; Prezzi, D; Goldoni, G; Molinari, E; Hohenester, U/titolo:Biexciton stability in carbon nanotubes/doi:10.1103%2FPhysRevLett.99.126806/rivista:Physical review letters (Print)/anno:2007/pagina_da:126806/pagina_a:/intervallo_pagine:126806/volume:99

We have applied the quantum Monte Carlo method and tight-binding modelling to calculate the binding energy of biexcitons in semiconductor carbon nanotubes for a wide range of diameters and chiralities. For typical nanotube diameters we find that biex

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::171f0f2ff53bf9afec047a8753875849
https://pubmed.ncbi.nlm.nih.gov/17930541