Zobrazeno 1 - 10
of 16
pro vyhledávání: '"David J. Gerold"'
Autor:
A. Kostrzewski, Suning Tang, Ray T. Chen, Tomasz P. Jannson, David J. Gerold, Robert J. Mayer
Publikováno v:
Journal of Lightwave Technology. 13:37-41
In this paper, a crosstalk model is developed to study the packing density and interconnect distance limitations of an optical interconnect system employing polymer-based single-mode bus arrays. The upper limit of channel packing density (1250 channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::749eeb205786709025be90f7b94ffc5b
https://doi.org/10.1109/50.350649
https://doi.org/10.1109/50.350649
Publikováno v:
SPIE Proceedings.
This study takes an integrated approach utilizing a combination of high NA 193 nm lithography, a sidewall chrome alternating aperture (SCAA) phase shift mask, optical proximity correction (OPC) and customized illumination in an attempt to demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e2a90762ebb5c330064f095061a9cb
https://doi.org/10.1117/12.485413
https://doi.org/10.1117/12.485413
Autor:
Kurt E. Wampler, Linda Yu, Thomas Laidig, Erika Schaefer, David J. Gerold, John S. Petersen, Lloyd C. Litt, Douglas Van Den Broeke, Wei Wu, Robert John Socha, Bernard J. Roman, J. Fung Chen, Kevin D. Lucas, Christopher J. Progler, Mark John Maslow, Carla M. Nelson-Thomas, Will Conley, Stephen Hsu, Bryan S. Kasprowicz, Shawn Cassel
Publikováno v:
SPIE Proceedings.
Each generation of semiconductor device technology drive new and interesting resolution enhancement technology (RET’s). The race to smaller and smaller geometry’s has forced device manufacturers to k1’s approaching 0.40. The authors have been i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf75daacbacda507a2d3e6d20c6185c2
https://doi.org/10.1117/12.485515
https://doi.org/10.1117/12.485515
Publikováno v:
SPIE Proceedings.
There are many variables that can affect lithographic dependent device yield. Because of this, it is not enough to make optical proximity corrections (OPC) based on the mask type, wavelength, lens, illumination-type and coherence. Resist chemistry an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fe8ca99ab98014baebdd1ecbd52d2ee
https://doi.org/10.1117/12.485506
https://doi.org/10.1117/12.485506
Autor:
Douglas Van Den Broeke, Robert John Socha, J. Fung Chen, Stephen Hsu, John S. Petersen, Will Conley, Donis G. Flagello, Linda Yu, Judith van Praagh, Wei Wu, Richard Droste, David J. Gerold
Publikováno v:
SPIE Proceedings.
In this paper the concept of chromeless phase lithography (CPL) is introduced and experimental results on an ASML PAS 5500/800 are presented. CPL is a single exposure technique and is capable of resolution enhancement on all device layers (bright and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34fd9989235d1c81963756098e5a1f0e
https://doi.org/10.1117/12.474594
https://doi.org/10.1117/12.474594
Autor:
John S. Petersen, Mark John Maslow, Bernard J. Roman, Lloyd C. Litt, Thomas Laidig, Richard Droste, J. Fung Chen, Kurt E. Wampler, Will Conley, Wei Wu, Robert John Socha, David J. Gerold, Judith van Praagh, Douglas Van Den Broeke, Kevin D. Lucas
Publikováno v:
SPIE Proceedings.
Examining features of varying pitch imaged using phase-shifting masks shows a pitch dependence on the transmission best suited for optimum imaging. The reason for this deals with the relative magnitude of the zero and higher diffraction orders that a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb08fc911e3517f48e1410b9476c875b
https://doi.org/10.1117/12.474599
https://doi.org/10.1117/12.474599
Publikováno v:
SPIE Proceedings.
At its conception, 193 nm lithography was thought to be the best way to take optical lithography to the 180 nm node. It was expected that 193 nm could support the now-defunct 160 nm node before optical lithography would have to yield to an undetermin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5240352bcf531bb38a27fe6d84bd3168
https://doi.org/10.1117/12.475664
https://doi.org/10.1117/12.475664
Autor:
John S. Petersen, Will Conley, Bernard J. Roman, Lloyd C. Litt, Kevin Lucas, Wei Wu, Douglas J. Van Den Broeke, J. Fung Chen, Thomas L. Laidig, Kurt E. Wampler, David J. Gerold, Mark J. Maslow, Robert J. Socha, Judith van Praagh, Richard Droste
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02aca9b47cc2b461c77b71e3a0f04437
https://doi.org/10.1117/12.475692
https://doi.org/10.1117/12.475692
Publikováno v:
SPIE Proceedings.
Our previous work showed that for 100nm lines, the Sidewall Chrome Alternating Aperture (SCAA) mask structure could overcome the problem of transmission and phase imbalance among multiple pitch structures. In that work, we explained the SCAA mask con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34c35f9bb3e2d2eabf124d7ba63e4e10
https://doi.org/10.1117/12.435772
https://doi.org/10.1117/12.435772
Publikováno v:
SPIE Proceedings.
The remaining difficulties in applying dual exposure dark-field strong-PSM technology can be overcome using the Sidewall Chrome Alternating Aperture (SCAA) mask structure, first proposed in 1992 and now fabricated. With all silica sidewalls covered a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0b56aad465d0d41a0434ef319f05981
https://doi.org/10.1117/12.410716
https://doi.org/10.1117/12.410716