Zobrazeno 1 - 10
of 12
pro vyhledávání: '"David J. Brzozowy"'
Autor:
Peter D. Rhyins, Patrick M. Martin, B. A. Blachowicz, Christopher J. Progler, David J. Brzozowy, Thomas Kocab, Scott Bowdoin, Chris Carney, Brian Tyrrell, Susan G. Cann, Michael Fritze
Publikováno v:
SPIE Proceedings.
Image placement errors and their effect on process latitude are a remaining issue in the development of strong phase shift mask technology. In this work, we will review the various causes of image placement error for strong phase shift imaging, inclu
Autor:
David J. Brzozowy, Medhat A. Toukhy
Publikováno v:
Advances in Resist Technology and Processing XIV.
The optimization of a resist formulation for performance robustness in addition to its basic lithographic performance provides added tolerance to formulation errors. This was demonstrated in this paper by the example of OiR-32 resist technology. The
Publikováno v:
Advances in Resist Technology and Processing XIV.
The addition of selected PACs to resists comprised of selectively esterified DNQ novolacs improves their performance in terms of side wall angle and resolution compared to resists whose photoactive component is composed of entirely selectively esteri
Autor:
Bernard T. Beauchemin, David J. Brzozowy, Edward A. Fitzgerald, Alfred T. Jeffries, Paula M. Gallagher-Wetmore, Ahmad A. Naiini
Publikováno v:
SPIE Proceedings.
Supercritical fluids were used to fractionate a conventional 60 meta/40 para cresol novolac into five narrow polydispersivity fractions. Single and multiple fractions were esterified with a DNQ moiety and recombined to obtain a resist having essentia
Publikováno v:
SPIE Proceedings.
The interesting phenomenon of CD undersizing has been predicted by simulations to occur in high contrast/high exposure margin resists imaged with high numerical aperture steppers. Under these conditions the out-of-focus images of dense arrays, which
Autor:
David J. Brzozowy, Patricia Scialdone, Medhat A. Toukhy, Rodney J. Hurditch, Steven G. Hansen, Karin R. Schlicht, Peggy M. Spragg
Publikováno v:
Advances in Resist Technology and Processing XI.
Photospeed measures of functional performance are widely employed for the characterization, quality control, and quality assurance of photoresists in both their manufacture and end use. In this paper we investigate from both a theoretical and experim
Publikováno v:
Advances in Resist Technology and Processing X.
In an effort to improve the performance of positive resists by increasing the amounts of o,o- bonding, some m-/p-cresol novolacs were prepared in which a portion of the p-cresol was replaced by 2,6-bishydroxymethyl-p-cresol (BHMPC). This work disting
Publikováno v:
Advances in Resist Technology and Processing X.
Thin film optical interference causes a sinusoidal variation in lithographic properties with film thicknessknown as the swing effect. The most well known manifestations are the threshold clearing energy (Ej) andcritical dimension (CD) swings which ar
Publikováno v:
Advances in Resist Technology and Processing VIII.
The strategy and chemistry employed to develop high resolution, high temperature positive resist systems (flow temperature >= 140 degree(s)C) based on novolak resin chemistry are reviewed and compared in this paper. Modest gains in resist thermal flo
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