Zobrazeno 1 - 10
of 103
pro vyhledávání: '"David I. Westwood"'
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 14:1098-1103
A process for anisotropically etching AlGalnP/GaAs laser structures in a high-temperature (180degC), single-step BCl3/Cl2/Ar plasma process is demonstrated. The etch rate is shown to be stable over the duration of the etch due to its in- sensitivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bb1dfcd88e23f66d120f7f731eb3e9c
https://doi.org/10.1109/jstqe.2008.918260
https://doi.org/10.1109/jstqe.2008.918260
Publikováno v:
Semiconductor Science and Technology. 22:1010-1015
A process for fabricating deep-etched nanostructures in AlGaInP and GaAs using a BCl3/Cl2/Ar inductively coupled plasma (ICP) is reported. The sidewall profile of 4 µm wide ridges, etched using a two-step process, is shown to be strongly dependent o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ad7d9f2f9118a3731421180ed22763
https://doi.org/10.1088/0268-1242/22/9/006
https://doi.org/10.1088/0268-1242/22/9/006
Publikováno v:
Semiconductor Science and Technology. 21:513-519
The etch rate of AlGaInP-based laser structures and selectivity, with respect to SiO2, are reported as a function of inductively coupled plasma (ICP) process parameters for a BCl3/Cl2 etch chemistry. At room temperature InCl3, a reaction product of I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be644bedd8494adbc31606e89e37e95e
https://doi.org/10.1088/0268-1242/21/4/017
https://doi.org/10.1088/0268-1242/21/4/017
Publikováno v:
Materials Science and Engineering: B. 80:138-141
Atomic force microscopy (AFM) in air has been used to study various III–V semiconductor heterostructures. Topography of the (110) cleaved cross-sections has been examined where oxidation processes modify the surface and allow the structures to be i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b441d004259996d38cc35d4ada1d7da7
https://doi.org/10.1016/s0921-5107(00)00634-6
https://doi.org/10.1016/s0921-5107(00)00634-6
Publikováno v:
Applied Surface Science. 166:253-258
Hydrogen cleaning and nitridation of InSb (100) using radio frequency (r.f.)-generated radicals was investigated using reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Hydr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74cff89cbcddb2b2c77b1ab693e07a24
https://doi.org/10.1016/s0169-4332(00)00425-6
https://doi.org/10.1016/s0169-4332(00)00425-6
Publikováno v:
Applied Surface Science. 166:418-422
Radio frequency plasma-assisted molecular beam epitaxy (MBE) growth of GaN on InSb (100) has been investigated. This combination is interesting because a 45° rotation of a cubic epitaxial GaN layer could result in a nearly “lattice-matched” syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a6e8ead57d55e80c7b42ce1478ca3c
https://doi.org/10.1016/s0169-4332(00)00460-8
https://doi.org/10.1016/s0169-4332(00)00460-8
Publikováno v:
Journal of Crystal Growth. 216:119-126
ZnSe epilayers have been grown on Se-induced reconstructed GaAs(0 0 1) surfaces. By varying the growth parameters such as substrate reconstruction, substrate temperature and atomic flux ratio, of Se to Zn, reflection high-energy electron diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfdf828df93f8ff7c822719ca2d5c6c4
https://doi.org/10.1016/s0022-0248(00)00401-2
https://doi.org/10.1016/s0022-0248(00)00401-2
Publikováno v:
Applied Surface Science. :484-487
Reflectance anisotropy spectroscopy (RAS) has been used to monitor the formation and development of InAs islands grown onto GaAs(001) substrates in real time. This is possible because the signal at a photon energy of 4.0 eV is mainly sensitive to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd787a41e9059a54c7c31357c0b8c81
https://doi.org/10.1016/s0169-4332(98)00845-9
https://doi.org/10.1016/s0169-4332(98)00845-9
Publikováno v:
Thin Solid Films. 318:140-147
Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surface reconstruction and ultrathin coverages of material on semiconductor surfaces. This in situ technique therefore lends itself to monitoring the format
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67fe1f847e843d947c83497d0d006b4d
https://doi.org/10.1016/s0040-6090(97)01153-x
https://doi.org/10.1016/s0040-6090(97)01153-x
Publikováno v:
Journal of Physics: Condensed Matter. 10:1-43
There currently exists a wide range of powerful techniques for probing surfaces, mainly involving the use of electron or ion beams under high- or ultra-high-vacuum conditions. Recently there have been major efforts to develop surface sensitive optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cd1e645108ebd234e732bc0f5366e36
https://doi.org/10.1088/0953-8984/10/1/005
https://doi.org/10.1088/0953-8984/10/1/005