Zobrazeno 1 - 6
of 6
pro vyhledávání: '"David I. Tetelbaum"'
Autor:
Dmitry S. Korolev, Kristina S. Matyunina, Alena A. Nikolskaya, Alexey I. Belov, Alexey N. Mikhaylov, Artem A. Sushkov, Dmitry A. Pavlov, David I. Tetelbaum
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 870 (2024)
A novel and promising way for creating nanomaterials based on gallium oxide is the ion synthesis of Ga2O3 nanocrystals in a SiO2/Si dielectric matrix. The properties of nanocrystals are determined by the conditions of ion synthesis—the parameters o
Externí odkaz:
https://doaj.org/article/02debf94f355450e927584dacc2dd846
Autor:
Dmitry S. Korolev, Ruslan N. Kriukov, Kristina S. Matyunina, Alena A. Nikolskaya, Alexey I. Belov, Alexey N. Mikhaylov, Artem A. Sushkov, Dmitry A. Pavlov, David I. Tetelbaum
Publikováno v:
Nanomaterials, Vol 13, Iss 10, p 1658 (2023)
The ion-beam synthesis of Ga2O3 nanocrystals in dielectric matrices on silicon is a novel and promising way for creating nanomaterials based on gallium oxide. This research studies the regularities of changes, depending on the synthesis regimes used,
Externí odkaz:
https://doaj.org/article/9ba9490f1f5546028b47a58864547d8d
Autor:
Dmitry S. Korolev, Kristina S. Matyunina, Alena A. Nikolskaya, Ruslan N. Kriukov, Alexey V. Nezhdanov, Alexey I. Belov, Alexey N. Mikhaylov, Artem A. Sushkov, Dmitry A. Pavlov, Pavel A. Yunin, Mikhail N. Drozdov, David I. Tetelbaum
Publikováno v:
Nanomaterials, Vol 12, Iss 11, p 1840 (2022)
A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gal
Externí odkaz:
https://doaj.org/article/3860753ae2764b7483c354de9bc96814
Autor:
Maria N. Koryazhkina, Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry S. Korolev, Alexander V. Kruglov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, David I. Tetelbaum, Alexey N. Mikhaylov, Sergey A. Shchanikov, Sungjun Kim, Bernardo Spagnolo
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 12, Iss 1, p 14 (2022)
Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based information or computing systems. In particular, this refers to memristive devices based o
Externí odkaz:
https://doaj.org/article/d931f101a03b4e5baad5d0e2f4e0dfc9
Autor:
Sergeyi N. Nagornykh, Vladimir I. Pavlenkov, David I. Tetelbaum, Aleksey N. Mikhaiylov, Aleksey I. Belov, Dmitry S. Korolev, Andrey N. Shushunov, Aleksandr I. Bobrov, Dmitry A. Pavlov, Elena I. Shek
Publikováno v:
Modern Electronic Materials, Vol 1, Iss 2, Pp 33-37 (2015)
Using step-by-step removal of silicon layers, in which dislocation-related photoluminescence is observed after Si+ (100 keV, 1·1015 cm−2) ion implantation followed by high-temperature annealing in a chlorine containing atmosphere, it has been foun
Externí odkaz:
https://doaj.org/article/c6a681c879634026ba47dfaf530c63da
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