Zobrazeno 1 - 10
of 22
pro vyhledávání: '"David I. Shahin"'
Publikováno v:
ECS Transactions. 80:139-145
The processing optimization necessary to achieve the GaN-based trench MOS device is reported. Devices of this type have been designed, fabricated and characterized. The operation of the device is based on the formation of a vertical inversion layer b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9f972505d99a0e55a347f9c650041ff
https://doi.org/10.1149/08007.0139ecst
https://doi.org/10.1149/08007.0139ecst
Publikováno v:
ECS Transactions. 80:197-201
Diamond transistors with surface 2D conduction channels are projected to be radiation hard with respect to neutrons. However, ionizing radiation hardness may be a problem due to the disruption of the 2D hole concentration. In this paper, the processi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a49bde7be58b61bd8c69a1ce71d8fd9
https://doi.org/10.1149/08007.0197ecst
https://doi.org/10.1149/08007.0197ecst
Autor:
Travis J. Anderson, Aris Christou, Andrew D. Koehler, Marko J. Tadjer, Charles R. Eddy, Francis J. Kub, David I. Shahin, Karl D. Hobart, Shihyun Ahn, Virginia D. Wheeler, Fan Ren
Publikováno v:
ECS Transactions. 80:17-25
AlGaN/GaN high electron mobility transistors (HEMTs) are useful devices for next-generation RF and power electronics systems1,2. Traditional Ni-based Schottky gates in these devices have been shown to degrade when subjected to electrical stress, ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af20aeaf4c6dd56595ecd3115fec4681
https://doi.org/10.1149/08003.0017ecst
https://doi.org/10.1149/08003.0017ecst
Publikováno v:
Gallium Oxide ISBN: 9783030371524
This chapter reviews recent literature on band offsets of dielectrics and semiconductors to gallium oxide and its ternary alloy, aluminum gallium oxide. Band diagram principles are reviewed, and an X-Ray photoelectron spectroscopy method for accurate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d69081fae6356dc87e93f804b75210d0
https://doi.org/10.1007/978-3-030-37153-1_25
https://doi.org/10.1007/978-3-030-37153-1_25
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P165-P168
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf1e3b89dd5cfbdcf35946ec9eeb2a33
https://doi.org/10.1149/2.0291704jss
https://doi.org/10.1149/2.0291704jss
Autor:
Marko J. Tadjer, Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart, David I. Shahin, Fritz J. Kub, Charles R. Eddy
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P58-P61
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f30d98c37823894217d80e718917078
https://doi.org/10.1149/2.0231701jss
https://doi.org/10.1149/2.0231701jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:Q3052-Q3055
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f2b89821c8f7e943dd2393935983196
https://doi.org/10.1149/2.0131702jss
https://doi.org/10.1149/2.0131702jss
Autor:
Jordan D. Greenlee, Travis J. Anderson, Bradley D. Weaver, Karl D. Hobart, David I. Shahin, Marko J. Tadjer, Andrew D. Koehler, Francis J. Kub
Publikováno v:
IEEE Electron Device Letters. 37:545-548
Radiation tolerance of AlGaN/GaN high-electron mobility transistors (HEMTs) is studied with 2-MeV protons, up to a fluence of $6 \times 10^{14}$ H+/cm2 (about 200 times of typical Si MOSFET rating). The increase in dynamic ON-resistance ( $R_{{\texti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::992ce856d5e377eb04f3130e49057a49
https://doi.org/10.1109/led.2016.2537050
https://doi.org/10.1109/led.2016.2537050
Autor:
Charles R. Eddy, Aris Christou, Virginia D. Wheeler, Francis J. Kub, Andrew D. Koehler, Karl D. Hobart, David I. Shahin, Travis J. Anderson, Marko J. Tadjer
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q204-Q207
TiN, a transition metal nitride, has been evaluated as an electrically and thermally stable Schottky gate material for AlGaN/GaN high electron mobility transistors. HEMTs with 75 nm TiN gates deposited via atomic layer deposition at 350◦C exhibited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28f1ee5224476461eb389bf7a1ebfa6
https://doi.org/10.1149/2.0211607jss
https://doi.org/10.1149/2.0211607jss
Autor:
Fritz J. Kub, Andrew D. Koehler, Jordan D. Greenlee, Bradley D. Weaver, David I. Shahin, Travis J. Anderson, Karl D. Hobart, Jennifer K. Hite
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q208-Q212
The radiation tolerance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on high quality, low threading dislocation density (TDD) ammonothermal GaN and hydride vapor phase epitaxy GaN substrates was studied and compared to the radia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd4d91878155b0c00a842dd1b6554f64
https://doi.org/10.1149/2.0281607jss
https://doi.org/10.1149/2.0281607jss