Zobrazeno 1 - 10
of 28
pro vyhledávání: '"David Hetzer"'
Autor:
Kanzo Kato, Lior Huli, Nathan Antonovich, David Hetzer, Steven Grzeskowiak, Eric Liu, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Takahiro Kitano, Seiji Nagahara, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo
Publikováno v:
Advances in Patterning Materials and Processes XL.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f26d28be561703578290b2c86ae190
https://doi.org/10.1117/12.2657290
https://doi.org/10.1117/12.2657290
Autor:
Kanzo Kato, Lior Huli, David Hetzer, Steven Grzeskowiak, Alexandra Krawicz, Nayoung Bae, Satoru Shimura, Shinichiro Kawakami, Yuhei Kuwahara, Cong Que Dinh, Soichiro Okada, Takahiro Kitano, Seiji Nagahara, Akihiro Sonoda
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28a45c5dd27e45f08ae7af37c1ea4b4
https://doi.org/10.1117/12.2642878
https://doi.org/10.1117/12.2642878
Autor:
Chi-Chun Liu, Kafai Lai, Jing Guo, Nelson Felix, John C. Arnold, Eric Liu, Richard A. Farrell, David Hetzer, Yann Mignot, Yasuyuki Ido, Makoto Muramatsu, Akiteru Ko, Daniel Corliss
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
The progress of using DSA for metal cut to achieve sub-20nm tip-to-tip (t2t) critical dimension (CD) is reported. Small and uniform t2t CD is very challenging due to lithographic limitation but holds the key to backend-of-the-line (BEOL) scaling. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1fbc443d03ad4a016308fbc964c54ef
https://doi.org/10.1117/12.2515862
https://doi.org/10.1117/12.2515862
Autor:
Gert J. Leusink, Angelique Raley, Richard A. Farrell, Akitero Ko, David L. O'Meara, K. Tapily, David Hetzer, Peter Biolsi, Elliott Franke, Anton J. deVilliers, Cory Wajda, Jodi Hotalen
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Multi-patterning processes such as self-aligned double patterning (SADP) and self-aligned quadruple patterning (SAQP) present new challenges to the semiconductor device manufacturing such as increased relative cost to previous nodes, longer cycle tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc65e7a4a9c378c4ae5c488c578eb148
https://doi.org/10.1117/12.2303004
https://doi.org/10.1117/12.2303004
Autor:
Kafai Lai, Nelson Felix, Andrew Metz, David Hetzer, Jing Guo, Martin Glodde, Daniel Corliss, Jing Sha, Chi-Chun Liu, Yasuyuki Ido, Makoto Muramatsu, Richard A. Farrell, Cheng Chi, Yann Mignot
Publikováno v:
Novel Patterning Technologies 2018.
The progress of using DSA for metal cut to achieve sub-20nm tip-to-tip (t2t) critical dimension (CD) is reported. Small and uniform t2t CD is very challenging due to lithographic limitation but holds the key to backend-of-the-line (BEOL) scaling. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0e59deb279759215addb427f7b1bfb5
https://doi.org/10.1117/12.2297365
https://doi.org/10.1117/12.2297365
Autor:
Andrew Metz, David Hetzer, Nihar Mohanty, Subhadeep Kal, Carlos Fonseca, Ryan L. Burns, Xinghua Sun, Devillers Anton J, Cheryl Pereira, Angelique Raley, Akiteru Ko, Steven Scheer, Jeffrey Smith, Richard A. Farrell, Peter Biolsi, Lior Huli
Publikováno v:
SPIE Proceedings.
As the industry marches on onto the 5nm node and beyond, scaling has slowed down, with all major IDMs & foundries predicting a 3-4 year cadence for scaling. A major reason for this slowdown is not the technical challenge of making features smaller, b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8414a480901e95c55f1a6019a09bcc0d
https://doi.org/10.1117/12.2258108
https://doi.org/10.1117/12.2258108
Autor:
Daniel Corliss, Martha I. Sanchez, Doni Parnell, Yongan Xu, Chi-Chun Liu, Jing Guo, Lovejeet Singh, Nelson Felix, Yann Mignot, Tsuyoshi Furukawa, David Hetzer, Daniel P. Sanders, Luciana Meli, Sean D. Burns, Kristin Schmidt, Richard A. Farrell, Kafai Lai, John C. Arnold, Cheng Chi, Andrew Metz
Publikováno v:
SPIE Proceedings.
In this study, the integrity and the benefits of the DSA shrink process were verified through a via-chain test structure, which was fabricated by either DSA or baseline litho/etch process for via layer formation while metal layer processes remain the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4b933760d1c45cd8d50035676700bf
https://doi.org/10.1117/12.2260454
https://doi.org/10.1117/12.2260454
Autor:
Robert L. Bruce, Stuart A. Sieg, Mark Somervell, Daniel P. Sanders, Richard A. Farrell, Hoa Truong, Kafai Lai, Akiteru Ko, Chi-Chun Liu, Andrew Metz, Matthew E. Colburn, Kristin Schmidt, Nelson Felix, Elliott Franke, Daniel Corliss, John C. Arnold, Tsuyoshi Furukawa, Indira Seshadri, Hsinyu Tsai, Yann Mignot, Ekmini Anuja De Silva, Lovejeet Singh, David Hetzer, Luciana Meli, Doni Parnell, Martha I. Sanchez, Scott LeFevre, Cheng Chi
Publikováno v:
SPIE Proceedings.
The progress of three potential DSA applications, i.e. fin formation, via shrink, and pillars, were reviewed in this paper. For fin application, in addition to pattern quality, other important considerations such as customization and design flexibili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::621ee7f5d3e718c914e8decb0858a3ef
https://doi.org/10.1117/12.2260479
https://doi.org/10.1117/12.2260479
Autor:
Richard A. Farrell, Fee Li Lie, Michael A. Guillorn, Hoa Truong, Elliott Franke, Sean D. Burns, Matthew E. Colburn, Akiteru Ko, Mark Somervell, Nelson Felix, John C. Arnold, David Hetzer, Hsinyu Tsai, Stuart A. Sieg, Kafai Lai, Chi-Chun Liu, Daniel P. Sanders
Publikováno v:
SPIE Newsroom.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0f7f1588d44e7df8463769208c909dc
https://doi.org/10.1117/2.1201606.006519
https://doi.org/10.1117/2.1201606.006519
Autor:
Andrew Metz, Daiji Kawamura, Cheng Chi, Richard A. Farrell, Matthew E. Colburn, Nelson Felix, Martha I. Sanchez, Daniel P. Sanders, Yongan Xu, Lovejeet Singh, Jed W. Pitera, Chi-Chun Liu, John C. Arnold, Kafai Lai, Desilva Ekmini Anuja, Tsuyoshi Furukawa, Hongyun Cottle, Luciana Meli, Kristin Schmidt, David Hetzer
Publikováno v:
SPIE Proceedings.
Directed self-assembly (DSA) of block copolymers (BCPs) has become a promising patterning technique for 7nm node hole shrink process due to its material-controlled CD uniformity and process simplicity.[1] For such application, cylinder-forming BCP sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::869e2b564cd6dd3181610bf72856345d
https://doi.org/10.1117/12.2219706
https://doi.org/10.1117/12.2219706