Zobrazeno 1 - 10
of 57
pro vyhledávání: '"David Harame"'
Autor:
Chen Shang, Kaiyin Feng, Eamonn T. Hughes, Andrew Clark, Mukul Debnath, Rosalyn Koscica, Gerald Leake, Joshua Herman, David Harame, Peter Ludewig, Yating Wan, John E. Bowers
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-8 (2022)
Abstract Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket
Externí odkaz:
https://doaj.org/article/2a3b78a8d44a404f99f112ff8e6633d3
Autor:
Kaiyin Feng, Chen Shang, Eamonn Hughes, Andrew Clark, Rosalyn Koscica, Peter Ludewig, David Harame, John Bowers
Publikováno v:
Photonics, Vol 10, Iss 5, p 534 (2023)
We report for the first time the direct growth of quantum dot (QD) lasers with electrical pumping on 300 mm Si wafers on both a planar template and in-pocket template for in-plane photonic integration. O-band lasers with five QD layers were grown wit
Externí odkaz:
https://doaj.org/article/3ac9da4dde944c7387e530fa0accc51c
Autor:
Amit Dikshit, Jin Wallner, M. Rakib Uddin, M. Jobayer Hossain, Javery Mann, Amir Begovic, Yukta Timalsina, Lewis G. Carpenter, Gerald Leake, Christopher Baiocco, Colin McDonough, Nicholas Fahrenkopf, Chandra C. Cotter, Christopher Striemer, David Harame
Publikováno v:
Integrated Optics: Devices, Materials, and Technologies XXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30b7a9d8e9a0296877eecbfd644b7a3
https://doi.org/10.1117/12.2651445
https://doi.org/10.1117/12.2651445
Autor:
Kaiyin Feng, Chen Shang, Eamonn Hughes, Rosalyn Koscica, Andrew Clark, Mukul Debnath, Gerald Leake, David Harame, Peter Ludewig, John Bowers
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::877718e04b6ca6ab200bdf87a7114fca
https://doi.org/10.23919/islc52947.2022.9943310
https://doi.org/10.23919/islc52947.2022.9943310
Autor:
Christopher Striemer, Graham Pennington, Jill Patel, Peter McGarvey, Colin McDonough, Barton Bergman, Annette Teng, Thomas Miller, David Harame, Tyler Howard, Thomas Brown
Publikováno v:
Frontiers in Optics + Laser Science 2022 (FIO, LS).
The AIM Photonics TAP facility is a 300mm wafer compatible packaging fab available to public and private organizations for prototype development. This paper provides an overview of current packaging and metrology capabilities.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d5723353e328b420df9db683c50ab85
https://doi.org/10.1364/fio.2022.jw5a.50
https://doi.org/10.1364/fio.2022.jw5a.50
Publikováno v:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
This paper reports a 28GHz broadband single-pole double-throw (SPDT) travelling wave switch designed in a 22nm fully-depleted silicon-on-insulator (FD-SOI) technology. The 28GHz SPDT TRx switch covers the n257 and n258 bands of 5G systems. Measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92550f7e5fa0aa4f2496fb39a365a9e6
https://doi.org/10.1109/s3s46989.2019.9320736
https://doi.org/10.1109/s3s46989.2019.9320736
Autor:
Klaus Hempel, R. Taylor, Tianbing Chen, Alexis Divay, Tom Herrmann, Alban Zaka, Patrick James Artz, Yogadissen Andee, Steffen Lehmann, L. Pirro, Zhixing Zhao, Carsten Grass, Jan Hoentschel, Ricardo Sousa, Juergen Faul, David Harame, J. Mazurier, Luca Lucci
Publikováno v:
ESSDERC
This paper proposes three methods of reducing device gate resistance and parasitic capacitance while boosting transconductance of MOSFET on 22FDX®. The f MAX can be improved by 50% and up to 75% for NFET and PFET with respect to a standard 2.0µm fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff08f1a388899bb2e0e1a09eac0394e
https://doi.org/10.1109/essderc.2019.8901693
https://doi.org/10.1109/essderc.2019.8901693
Publikováno v:
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
A transformer-feedback low-noise amplifier (LNA) implemented in 22-nm SOI-CMOS with interstage noise matching is described. The LNA peak gain is 21.5dB at 22GHz, with a -3dB bandwidth (BW) of 19-36GHz. Minimum noise figure (NF) is 1.7dB centered at 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60ed03a603ecd7a58bb2f3022264eb16
https://doi.org/10.1109/rfic.2019.8701739
https://doi.org/10.1109/rfic.2019.8701739
Autor:
H. Jia, M. S. Dadash, Peter M. Asbeck, Alexandru Muller, M. Pasteanu, M. J. Gong, Raafat R. Mansour, Sorin P. Voinigescu, Sergiu Iordanescu, L. E. Gutierrez, S. Bonen, Ioana Giangu, David Harame, Utku Alakusu, W. T. Chen, Y. Duan, David R. Daughton, N. Messaoudi, Gina C. Adam, L. Lucci
Publikováno v:
IEEE Electron Device Letters
An approach is proposed to realize large-scale, “high-temperature” and high-fidelity quantum computing integrated circuits based on single- and multiple-coupled quantum-dot electron- and hole-spin qubits monolithically integrated with the mm-wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf7c5f7ab1fd8c10442403b01d998044
Autor:
Jack Pekarik, Sorin P. Voinigescu, Jean-Roland Martin-Gosse, Renata Camillo-Castillo, James Hoffman, Stefan Shopov, Vibhor Jain, David Harame
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:1985-1993
Critical analog electronic circuits for a possible 80-GHz bandwidth, frequency-interleaved, PAM-4 or discrete-multitone (DMT) linear fiber-optic front-end are implemented in a 90-nm SiGe BiCMOS technology. These include a novel vertically coupled, 40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b35e70c2aa9b3dfb0650ce7fce799be6
https://doi.org/10.1109/jssc.2016.2567445
https://doi.org/10.1109/jssc.2016.2567445