Zobrazeno 1 - 10
of 122
pro vyhledávání: '"David H. Chow"'
Autor:
Dustin Le, Yakov Royter, Donald A. Hitko, K.R. Elliott, Margaret F. Boag-O'Brien, Daniel Zehnder, Steven T. W. Chen, Pamela R. Patterson, Thomas C. Oh, M.C. Montes, James Chingwei Li, Samual Kim, Tahir Hussain, Aurelio Lopez, Marko Sokolich, Fiona C. Ku, David H. Chow, Moonmoon Akmal, J. Duvall, Irma Valles, Eason F. Wang, Peter D. Brewer
Publikováno v:
ECS Transactions. 50:1047-1054
Historically, compound semiconductors have enjoyed the benefit of material properties that lend themselves to high performance electron devices, but the ability to fabricate complex, high transistor count ICs is limited by the relative immaturity of
Autor:
Tahir Hussain, Marko Sokolich, Steven S. Bui, Peter M. Asbeck, Rajesh D. Rajavel, Yakov Royter, James Chingwei Li, Binqiang Shi, Charles H. Fields, Donald A. Hitko, Mary Y. Chen, David H. Chow
Publikováno v:
IEEE Transactions on Electron Devices. 54:398-409
Recent attempts to achieve 400 GHz or higher fT and f MAX with InP heterojunction bipolar transistors (HBTs) have resulted in aggressive scaling into the deep submicrometer regime. In order to alleviate some of the traditional mesa scaling rules, sev
Autor:
Stephen Thomas, Marko Sokolich, J. Duvall, Binqiang Shi, Rajesh D. Rajavel, Steven S. Bui, David H. Chow, Donald A. Hitko, James Chingwei Li, Keith V. Guinn, Mary Y. Chen, Z. Lao
Publikováno v:
Solid-State Electronics. 51:1-5
Traditional compound semiconductor HBT technologies do not allow for the independent design of the intrinsic and extrinsic collector regions commonly found in Si BJT and SiGe HBT technologies. By using a selectively implanted buried sub-collector (SI
Autor:
Marko Sokolich, Yakov Royter, Rajesh D. Rajavel, Steven S. Bui, S. Thomas, Charles H. Fields, Mary Chen, David H. Chow, Bin Shi
Publikováno v:
Solid-State Electronics. 49:981-985
We have demonstrated InP/InGaAs/InP MBE-grown DHBTs fabricated with patterned sub-collector by elevated temperature 200 °C N+ implant and subsequent device material over growth. F t / F max > 250 GHz/300 GHz were obtained on DHBTs with 0.35 μm × 6
Autor:
Rajesh D. Rajavel, Steven S. Bui, Biqiang Shi, Mary Y. Chen, David H. Chow, Charles H. Fields, S. Thomas, Marko Sokolich, Donald A. Hitko, Yakov Royter
Publikováno v:
IEEE Transactions on Electron Devices. 51:1736-1739
We demonstrate molecular-beam epitaxy (MBE)-grown heterojunction bipolar transistors (HBTs) on InP substrates with a patterned implant n+ subcollector below the epitaxial layers. Device layers grown on implanted/annealed substrates were of similar qu
Autor:
S. Thomas, K.R. Elliott, Binqiang Shi, Donald A. Hitko, Rajesh D. Rajavel, Mary Y. Chen, James Chingwei Li, Marko Sokolich, David H. Chow, Steven S. Bui, Yakov Royter, Charles H. Fields
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:1615-1621
We describe a quasi-planar HBT process using a patterned implanted subcollector with a regrown MBE device layer. Using this process, we have demonstrated discrete SHBT with f/sub t/>250 GHz and DHBT with f/sub t/>230 GHz. The process eliminates the n
Publikováno v:
IEEE Transactions on Electron Devices. 51:1060-1064
The temperature dependence of the current-voltage (I-V) characteristics of InAs-AlSb-GaSb resonant interband tunnel diodes (RITDs) has been investigated from 223 to 423 K. Several device structures were examined, with tunnel barrier thicknesses from
Publikováno v:
Journal of Crystal Growth. 251:848-851
lnP/GaAssSb/InP double heterojunction bipolar transistor structures were grown in a solid-source molecular beam epitaxy system. Carbon or Be was used for the p-type doping of GaAs 0.51 Sb 0.49v . Hole concentrations in excess 2x l0 20 cm 3 were obtai
Publikováno v:
IEEE Transactions on Electron Devices. 49:19-24
The microwave frequency performance of InAs/ AlSb/GaSb resonant interband tunneling diodes has been examined experimentally. A bias-dependent small-signal circuit model that matches the measured data well for the full range of measured frequencies (d
Autor:
Miroslav Micovic, D. Wong, Jeong-Sun Moon, P. J. Willadsen, Paul Hashimoto, M. Hu, C. McGuire, Shawn D. Burnham, M. Wetzel, David H. Chow, Ivan Milosavljevic
Publikováno v:
IEEE Electron Device Letters. 32:297-299
In this letter, we report the state-of-the-art micro wave noise performance of discrete 0.15-μm-gate-length field plated (FP) GaN HEMTs. The FP GaN HEMTs yielded a peak fτ/fmax of 60 GHz/150 GHz at Vds = 10 V. An fmax of 230 GHz was obtained at Vds