Zobrazeno 1 - 10
of 117
pro vyhledávání: '"David G. Mehuys"'
Autor:
Vince Dominic, Atul Mathur, Radhakrishnan Nagarajan, M.F. Van Leeuwen, S. Murthy, Jonas Webjorn, C.H. Joyner, M. Reffle, S.G. Grubb, M. Kauffman, David G. Mehuys, Damien Lambert, Drew D. Perkins, Mark J. Missey, F.A. Kish, Sheila Hurtt, J. Back, Matthew L. Mitchell, R. Schneider, Randal A. Salvatore, Dave Welch, Alan C. Nilsson, Andrew Dentai, Masaki Kato, Peter W. Evans, Jacco Pleumeekers, Mehrdad Ziari, Serge Melle
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 13:22-31
An overview of commercially available large-scale photonic integrated circuits (PICs) in indium phosphide is provided. Results of 100-Gb/s PICs that are field-deployed in wavelength-division-multiplexing (WDM) networks is provided, along with develop
Autor:
Richard P. Schneider, R. Schlenker, C.H. Joyner, S.K. Mathis, Robert B. Taylor, S. Murthy, Andrew Dentai, Randal A. Salvatore, Masaki Kato, Radhakrishnan Nagarajan, Jonas Webjorn, David F. Welch, Peter W. Evans, M. Reffle, M.F. Van Leeuwen, Alan C. Nilsson, Fred A. Kish, Vince Dominic, M. Kauffman, J.S. Bostak, Damien Lambert, Frank H. Peters, Huan-Shang Tsai, David G. Mehuys, S.C. Pennypacker, Jacco Pleumeekers, D. Perkins, Matthew L. Mitchell, Jagdeep Singh, R.H. Miles, Atul Mathur, T. Butrie, Mehrdad Ziari, S.G. Grubb, Mark J. Missey
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 11:50-65
100-Gb/s dense wavelength division multiplexed (DWDM) transmitter and receiver photonic integrated circuits (PICs) are demonstrated. The transmitter is realized through the integration of over 50 discrete functions onto a single monolithic InP chip.
Publikováno v:
IEEE Journal of Quantum Electronics. 30:685-694
The stability of a plane wave propagating in single- and double-pass broad-area diode laser amplifiers is analyzed. It is found that laterally periodic perturbations exhibit a longitudinal variation that is a mixture of exponential growth and periodi
Publikováno v:
IEEE Photonics Technology Letters. 5:1179-1182
A broad-area tapered-contact single-pass amplifier emitting at 860-nm wavelength is demonstrated to emit up to 5.25 W continuous wave (CW) in a near-diffraction-limited radiation pattern. The diffraction-limited component of the radiation pattern, co
Publikováno v:
IEEE Photonics Technology Letters. 5:919-922
A high-power external-cavity ring laser, incorporating a 600- mu m-wide GaAlAs traveling wave amplifier as a gain element, is demonstrated. The laser generated a pulsed (200 ns) output power of 9.3 W with a near-diffraction-limited beam quality and u
Publikováno v:
IEEE Photonics Technology Letters. 5:922-925
A Mach-Zehnder imaging interferometric is used to directly measure the lateral phase profile in the near field of broad-area semiconductor optical amplifiers with lambda /25 phase resolution, or 0.1 degrees C in temperature. The quadratic thermally i
Publikováno v:
IEEE Journal of Quantum Electronics. 29:2044-2051
A numerical model for flared semiconductor optical amplifiers that incorporates the effects of gain and index saturation and thermal effects is presented. Theoretical near fields, far fields, and quadratically phase-corrected far fields are presented
Autor:
S. O'Brien, R. Parke, Donald R. Scifres, David F. Welch, Robert J. Lang, David G. Mehuys, K.M. Dzurko, Robert G. Waarts
Publikováno v:
IEEE Journal of Quantum Electronics. 29:2052-2057
High-power monolithically integrated flared amplifier master oscillator power amplifiers (MFA-MOPAs) that operate up to 2 W continuous wave (CW) in a single diffraction-limited lobe have been fabricated. The spectral output of the MFA-MOPA is single
Autor:
R. Parke, David F. Welch, S. O'Brien, Donald R. Scifres, K.M. Dzurko, Robert J. Lang, A. Hardy, David G. Mehuys
Publikováno v:
IEEE Photonics Technology Letters. 5:297-300
The authors fabricated a monolithically integrated master oscillator power amplifier, M-MOPA, with a flared power amplifier region which radiates in a single diffraction limited lobe to an output power in excess of 2 W CW. The radiation pattern is st
Autor:
Vincent G. Dominic, D. Giltner, L.D. Garrett, Michael Eiselt, David G. Mehuys, Robert G. Waarts, R.W. Tkach
Publikováno v:
IEEE Photonics Technology Letters. 13:157-159
The benefits of distributed Raman amplification are demonstrated in a buried cabled field fiber. The performance improvement of 3.8 dB was achieved in a 5/spl times/120-km 10-Gb/s transmission experiment using 650-mW Raman amplification in each span