Zobrazeno 1 - 2
of 2
pro vyhledávání: '"David G. Brochu"'
Autor:
Y. Tan, M. Jaffe, Ping-Chuan Wang, K. Bandy, David G. Brochu, R. Achanta, R. Logan, D. P. Ioannou
Publikováno v:
IRPS
The Hot Carrier Injection (HCI) effects on the DC and small signal RF parameters of nanoscale Silicon-On-Insulator (SOI) nMOSFETs developed for high performance low noise amplifier (LNA) circuits are investigated. In recent years there has been an in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e8df7cf75d84856e8c4ec2e766d1286
https://doi.org/10.1109/irps.2018.8353697
https://doi.org/10.1109/irps.2018.8353697
Autor:
Charles W. Griffin, Dinesh Badami, David G. Brochu, Ernest Y. Wu, Michael A. Shinosky, W. Liu, Fernando Guarin, Roger A. Dufresne
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
In this work, we report for the first time the experimental evidence of layout dependence on gate dielectric time-dependent-dielectric-breakdown TDDB in a leading edge HKMG FinFET technology. Structures with identical total effective gate area but va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9038c94ecf47529eeca87c561f073f7a
https://doi.org/10.1109/irps.2016.7574575
https://doi.org/10.1109/irps.2016.7574575