Zobrazeno 1 - 10
of 36
pro vyhledávání: '"David Fuertes Marrón"'
Autor:
José Manuel Míguez Novoa, Volker Hoffmann, Eduardo Forniés, Laura Mendez, Marta Tojeiro, Fernando Ruiz, Manuel Funes, Carlos del Cañizo, David Fuertes Marrón, Nerea Dasilva Villanueva, Luis Jaime Caballero, Bülent Arıkan, Raşit Turan, Hasan Hüseyin Canar, Guillermo Sánchez Plaza
Publikováno v:
Frontiers in Photonics, Vol 5 (2024)
Upgraded metallurgical-grade silicon (UMG-Si) has the potential to reduce the cost of photovoltaic (PV) technology and improve its environmental profile. In this contribution, we summarize the extensive work made in the research and development of UM
Externí odkaz:
https://doaj.org/article/caa28f612445468d9c95f13492fa3f24
Autor:
Sergio Revuelta, Nerea Dasilva-Villanueva, David Fuertes Marrón, Carlos del Cañizo, Enrique Cánovas
Publikováno v:
Advanced Energy & Sustainability Research, Vol 3, Iss 9, Pp n/a-n/a (2022)
Herein, it is demonstrated how the carrier mobility and carrier lifetime of upgraded‐metallurgical grade silicon (UMG‐Si), a feedstock alternative to electronic‐grade, high‐purity polysilicon dominating photovoltaic technology, can be largely
Externí odkaz:
https://doaj.org/article/65d8653cc50c4eb2ac0315453ef00116
Autor:
Noor Titan Putri Hartono, Janak Thapa, Armi Tiihonen, Felipe Oviedo, Clio Batali, Jason J. Yoo, Zhe Liu, Ruipeng Li, David Fuertes Marrón, Moungi G. Bawendi, Tonio Buonassisi, Shijing Sun
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
The stability of perovskite solar cells can be improved by using hybrid-organic perovskites capping-layers atop the active material. Here the authors use machine learning to optimize capping layers by monitoring time to degradation of differently cap
Externí odkaz:
https://doaj.org/article/861c90d6759a4ed095d7c0e936f97937
Autor:
Noor Titan Putri Hartono, Janak Thapa, Armi Tiihonen, Felipe Oviedo, Clio Batali, Jason J. Yoo, Zhe Liu, Ruipeng Li, David Fuertes Marrón, Moungi G. Bawendi, Tonio Buonassisi, Shijing Sun
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-1 (2020)
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Externí odkaz:
https://doaj.org/article/731a37620bbf4b759c6afcb2c19c82e8
Autor:
Ricardo Vidal Lorbada, Thomas Walter, David Fuertes Marrón, Dennis Muecke, Tetiana Lavrenko, Oliver Salomon, Raymund Schaeffler
Publikováno v:
Energies, Vol 13, Iss 18, p 4753 (2020)
In this paper, the impact of the back contact barrier on the performance of Cu (In, Ga) Se2 solar cells is addressed. This effect is clearly visible at lower temperatures, but it also influences the fundamental parameters of a solar cell, such as ope
Externí odkaz:
https://doaj.org/article/867489f5342247d19183bc1faa9682f2
Autor:
Marcel S. Claro, Juan P. Martínez‐Pastor, Alejandro Molina‐Sánchez, Khalil El Hajraoui, Justyna Grzonka, Hamid Pashaei Adl, David Fuertes Marrón, Paulo J. Ferreira, Oleksandr Bondarchuk, Sascha Sadewasser
Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3a17a007af27efdb4216992bd31f006
http://arxiv.org/abs/2206.06250
http://arxiv.org/abs/2206.06250
Publikováno v:
Optica Advanced Photonics Congress 2022.
By means of Terahertz Spectroscopy we demonstrate a boost in charge carrier mobility in upgraded-metallurgical grade silicon wafers treated by phosphorous diffusion gettering. Mobilities parallel those of high quality poly-Si.
Publikováno v:
SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics.
Publikováno v:
SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics.
Autor:
Jose Virtuoso, Luis Aparicio, David Fuster, Marco Zutter, Daniel Brito, David Fuertes Marrón, Marina Alves, Pedro Anacleto, Jorge M. Garcia, Fernando Briones, Sascha Sadewasser
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
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We present the development of a small foot-print physical vapor deposition (PVD) system for in-situ deposition of all layers required in a complete Cu(In,Ga)Se (CIGS) solar cell. Seven sputtering magnetrons and one valved-cracker source have been cus