Zobrazeno 1 - 10
of 48
pro vyhledávání: '"David Fritsche"'
Autor:
Songhui Li, David Fritsche, Laszlo Szilagyi, Xin Xu, Quang Huy Le, Defu Wang, Thomas Kampfe, Corrado Carta, Frank Ellinger
Publikováno v:
2021 16th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::284d8f5ba225a8307a039a2c27a64bdc
https://doi.org/10.23919/eumic50153.2022.9783227
https://doi.org/10.23919/eumic50153.2022.9783227
Autor:
Karen Katz, Gigi Hirsch, Paul Beninger, Florence T. Bourgeois, David Fritsche, Donna Palmer, Diane Shoda, John Ferguson, Matt W Courtney, Kay Larholt, Kevin K. Nam
Publikováno v:
Therapeutic Innovation & Regulatory Science
Background Data sharing among stakeholders in the development, access, and use of drug therapies is critical but the current system and process are inefficient. Methods We take a Systems Engineering approach with a realistic use case to propose a sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fdf41ca3a3c1f025ad860a47715df18
https://doi.org/10.1007/s43441-020-00227-y
https://doi.org/10.1007/s43441-020-00227-y
Autor:
Hatem Ghaleb, Christian Carlowitz, Corrado Carta, Paul Starke, Frank Ellinger, Florian Protze, David Fritsche
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 68:2011-2019
A 180-GHz super-regenerative oscillator capable of 58 dB gain and fast switching at a rate up to 10 GHz is implemented in a 130nm SiGe BiCMOS technology. It is the fastest reported super-regenerative circuit in terms of data-rate and the first one to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2001ff3ca0e208a3f832d3444ef490ab
https://doi.org/10.1109/tmtt.2020.2987555
https://doi.org/10.1109/tmtt.2020.2987555
Publikováno v:
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
This paper presents a voltage-controlled oscillator implemented on a 22-nm FD-SOI CMOS technology. Optimized for wide tuning range and high output power, the oscillator uses a transmission line and an MOS varactor in the resonator, achieving a tuning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb86c13a8ca090ba678723e9675d5b6b
https://doi.org/10.1109/rfit49453.2020.9226238
https://doi.org/10.1109/rfit49453.2020.9226238
Autor:
Songhui Li, David Fritsche, Paul Starke, Corrado Carta, Frank Ellinger, Vincent Riess, Paolo Valerio Testa
Publikováno v:
2019 IEEE Asia-Pacific Microwave Conference (APMC).
This paper presents a two-elements phased-array receiver (Rx) front-end for low-power applications from 170 GHz to 190 GHz. The front-end is implemented in a 130 nm SiGe BiC-MOS process and it consists of RF amplifiers, vector-modulator phase shifter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92abcf2edb8065d04c777fa61dc99df6
https://doi.org/10.1109/apmc46564.2019.9038747
https://doi.org/10.1109/apmc46564.2019.9038747
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:1349-1358
In this paper, a technique to extend the linearity and to improve the efficiency of power amplifiers (PAs) is analyzed. The method avoids complex topologies, often affecting the radio-frequency performance and increasing the power consumption, chip a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c13f766767e8bc5d99fc29d5fc0acf13
https://doi.org/10.1109/tmtt.2017.2772913
https://doi.org/10.1109/tmtt.2017.2772913
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:4002-4013
This paper presents a 190-GHz direct-conversion receiver capable of supporting higher order modulation schemes and implemented in a 130-nm SiGe BiCMOS technology. The circuit consists of a low-noise amplifier, an active fundamental mixer, a local-osc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac868ee5e3021a53f1158d238ebebe02
https://doi.org/10.1109/tmtt.2017.2698438
https://doi.org/10.1109/tmtt.2017.2698438
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:3312-3323
This paper presents a 190-GHz direct conversion transceiver (TRX) chipset with on-chip antennas implemented in a 130-nm SiGe BiCMOS technology for short-distance high-data-rate wireless links. The transmitter (TX) consists of an active fundamental up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44bf825d8a81a413dc78626cf338a810
https://doi.org/10.1109/tmtt.2017.2677908
https://doi.org/10.1109/tmtt.2017.2677908
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 7:415-423
This work presents an efficient method for realizing a laterally radiating 3-D monopole antenna for millimeter-wave and terahertz applications. The vertical antenna rod is formed with a standard $\text{17-}{\mu} \text{m}$ aluminum wire on a programma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a86047d4915038a9ada9ab0072093cbb
https://doi.org/10.1109/tthz.2017.2698264
https://doi.org/10.1109/tthz.2017.2698264
Publikováno v:
2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC).
In this paper, a survey of leading-edge distributed amplifiers is given. The measurements of our CMOS (Complementary Metal Oxide Semiconductor) and SiGe BiCMOS (Silicon Germanium Bipolar CMOS) amplifiers show bandwidths of 110 GHz and 180 GHz, and ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fa65c5b1836b19e60a6508490556c2f
https://doi.org/10.1109/imoc43827.2019.9317635
https://doi.org/10.1109/imoc43827.2019.9317635