Zobrazeno 1 - 10
of 19
pro vyhledávání: '"David Flötotto"'
Autor:
Sean Howard, Arjun Raghavan, Davide Iaia, Caizhi Xu, David Flötotto, Man-Hong Wong, Sung-Kwan Mo, Bahadur Singh, Raman Sankar, Hsin Lin, Tai-Chang Chiang, Vidya Madhavan
Publikováno v:
Physical Review Materials. 6
Autor:
T.-C. Chiang, David Flötotto, Cédric Bareille, Yao Li, Meng-Kai Lin, José Avila, Sahand Najafzadeh, Shik Shin, Yang Bai, James N. Eckstein, Joseph A. Hlevyack, Akihiro Tsuzuki, Ro-Ya Liu, Akiko Fukushima, Tsubaki Nagashima, Peng Chen, Takahiro Hashimoto, Kozo Okazaki
Publikováno v:
Physical Review Letters. 124
Interfacing bulk conducting topological Bi_{2}Se_{3} films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi_{1-x}Sb_{x})_{2}Te_{3} films on bulk Nb instead e
Autor:
Joseph A, Hlevyack, Sahand, Najafzadeh, Meng-Kai, Lin, Takahiro, Hashimoto, Tsubaki, Nagashima, Akihiro, Tsuzuki, Akiko, Fukushima, Cédric, Bareille, Yang, Bai, Peng, Chen, Ro-Ya, Liu, Yao, Li, David, Flötotto, José, Avila, James N, Eckstein, Shik, Shin, Kozo, Okazaki, T-C, Chiang
Publikováno v:
Physical review letters. 124(23)
Interfacing bulk conducting topological Bi_{2}Se_{3} films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi_{1-x}Sb_{x})_{2}Te_{3} films on bulk Nb instead e
Autor:
Eric J. Mittemeijer, Xiaoxiong Wang, Tai-Chang Chiang, David Flötotto, Mei-Yin Chou, Hawoong Hong, Caizhi Xu, Can Zhang, Yang-Hao Chan, Peng Chen, James N. Eckstein, Yang Bai, Paul Rossi, Jonathan D. Denlinger, Joseph A. Hlevyack
Publikováno v:
Nano Letters. 18:5628-5632
Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions. However, p
Autor:
David, Flötotto, Yang, Bai, Yang-Hao, Chan, Peng, Chen, Xiaoxiong, Wang, Paul, Rossi, Cai-Zhi, Xu, Can, Zhang, Joseph A, Hlevyack, Jonathan D, Denlinger, Hawoong, Hong, Mei-Yin, Chou, Eric J, Mittemeijer, James N, Eckstein, Tai-Chang, Chiang
Publikováno v:
Nano letters. 18(9)
Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudomagnetic field effects, helical flat bands, and topological phase transitions. However, p
Autor:
Xiaoxiong Wang, Joseph A. Hlevyack, David Flötotto, Sung-Kwan Mo, Caizhi Xu, Meng-Kai Lin, Peng Chen, Guang Bian, Tai-Chang Chiang
Publikováno v:
Physical Review Materials, vol 2, iss 6
Xu, C-Z; Wang, X; Chen, P; Flototto, D; Hlevyack, JA; Lin, M-K; et al.(2018). Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe2 films. PHYSICAL REVIEW MATERIALS, 2(6). doi: 10.1103/PhysRevMaterials.2.064002. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/4h58z2rw
Xu, C-Z; Wang, X; Chen, P; Flototto, D; Hlevyack, JA; Lin, M-K; et al.(2018). Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe2 films. PHYSICAL REVIEW MATERIALS, 2(6). doi: 10.1103/PhysRevMaterials.2.064002. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/4h58z2rw
Layered quasi-two-dimensional transition metal dichalcogenides (TMDCs), which can be readily made in ultrathin films, offer excellent opportunities for studying how dimensionality affects electronic structure and physical properties. Among all TMDCs,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dec69197251c192db093d7d2eaabc91a
http://arxiv.org/abs/1806.02521
http://arxiv.org/abs/1806.02521
Autor:
Takahiro Hashimoto, Yuichi Ota, Kozo Okazaki, Yang Bai, David Flötotto, James N. Eckstein, Can Zhang, Akihiro Tsuzuki, Tai-Chang Chiang, Shik Shin
Publikováno v:
Science Advances
Bismuth selenide becomes superconducting upon coupling to metallic niobium, and its topological states pair up to form a gap.
A topological insulator film coupled to a simple isotropic s-wave superconductor substrate can foster helical pairing o
A topological insulator film coupled to a simple isotropic s-wave superconductor substrate can foster helical pairing o
Autor:
David Flötotto, Mei-Yin Chou, Yang-Hao Chan, Caizhi Xu, Tai-Chang Chiang, Peng Chen, Sung-Kwan Mo, Joseph A. Hlevyack, Guang Bian, Xiaoxiong Wang
Publikováno v:
Physical Review B, vol 97, iss 3
Xu, CZ; Chan, YH; Chen, P; Wang, X; Flötotto, D; Hlevyack, JA; et al.(2018). Gapped electronic structure of epitaxial stanene on InSb(111). Physical Review B, 97(3). doi: 10.1103/PhysRevB.97.035122. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/1jf6c3ch
Xu, CZ; Chan, YH; Chen, P; Wang, X; Flötotto, D; Hlevyack, JA; et al.(2018). Gapped electronic structure of epitaxial stanene on InSb(111). Physical Review B, 97(3). doi: 10.1103/PhysRevB.97.035122. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/1jf6c3ch
Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4793c9d5fb210466061726418dae055
https://escholarship.org/uc/item/1jf6c3ch
https://escholarship.org/uc/item/1jf6c3ch
Publikováno v:
Surface Science. 633:1-7
The structural developments during growth of ultrathin amorphous Al 2 O 3 film on bare Al(100) and Al(111) surfaces, by dry thermal oxidation in the oxygen partial pressure range of 1 × 10 − 5 –1.0 Pa at 300 K, were investigated as function of t
Publikováno v:
Surface and Interface Analysis. 46:1057-1063