Zobrazeno 1 - 2
of 2
pro vyhledávání: '"David F. Moeller"'
Publikováno v:
Proceedings of the IEEE Custom Integrated Circuits Conference.
Autor:
R. Wolischeid, David F. Moeller, James S. Irwin, Gary Kurtzman, J. Paramesh, D. Eickbusch, Stephen W. Dow, Brian M. Ballweber, Ling-Miao Chou, Praveen Manapragada, K. Johnson, G. Black
Publikováno v:
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
This transceiver IC, fabricated in SiGe:C BiCMOS, contains dual LNAs, dual quadrature mixers, baseband filtering, RX and TX VCOs, and transmit buffers. The IC has GSM band performance of 67.5 dB gain, 2.3 dB NF, +49 dBm IIP2, -9 dBm IIP3 50 dB image