Zobrazeno 1 - 10
of 149
pro vyhledávání: '"David F. Brown"'
Autor:
David F. Brown
Publikováno v:
Revue LISA (2020)
Externí odkaz:
https://doaj.org/article/ff43b5d6097a4a09831c1eb6d90d76ed
Autor:
David F. Brown
Publikováno v:
Revue LISA (2020)
Externí odkaz:
https://doaj.org/article/648fba8134d64254b7ae25894d8682ac
Autor:
Leon M. Ptaszek, Christopher W. Baugh, Steven A. Lubitz, Jeremy N. Ruskin, Grace Ha, Margaux Forsch, Samer A. DeOliveira, Samia Baig, E. Kevin Heist, Jason H. Wasfy, David F. Brown, Paul D. Biddinger, Ali S. Raja, Benjamin Scirica, Benjamin A. White, Moussa Mansour
Publikováno v:
Journal of the American Heart Association: Cardiovascular and Cerebrovascular Disease, Vol 8, Iss 18 (2019)
Background Variability in the management of atrial fibrillation (AF) in the emergency department (ED) leads to avoidable hospital admissions and prolonged length of stay (LOS). In a retrospective single‐center study, a multidisciplinary AF treatmen
Externí odkaz:
https://doaj.org/article/14aef57d85434a8096ad1a3ed3618d6c
Autor:
Susann J. Jarhult, Melissa L. Howell, Isabelle Barnaure-Nachbar, Yuchiao Chang, Benjamin A. White, Mary Amatangelo, David F. Brown, Aneesh B. Singhal, Lee H. Schwamm, Scott B. Silverman, Joshua N. Goldstein
Publikováno v:
Western Journal of Emergency Medicine, Vol 19, Iss 2 (2018)
Introduction: Our goal was to assess whether use of a standardized clinical protocol improves efficiency for patients who present to the emergency department (ED) with symptoms of transient ischemic attack (TIA). Methods: We performed a structured, r
Externí odkaz:
https://doaj.org/article/e902db0787f3417cbdd10afcd8a690e5
Autor:
Herrault Florian G, David F. Brown, Joel C. Wong, Yan Tang, Hasan Sharifi, D. Regan, Helen Fung
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 10:1579-1582
This letter provides an overview of the metal-embedded chiplet assembly for microwave integrated circuits (MECAMICs) technology. MECAMIC is a 2.5-D wafer-level packaging approach that provides seamless heterogeneous integration capabilities of compou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bfc17eca90412a6aadcb8c098f32384
https://doi.org/10.1109/tcpmt.2020.3012505
https://doi.org/10.1109/tcpmt.2020.3012505
Autor:
David F. Brown
Publikováno v:
Revue LISA (2021)
Large Vessel Sutra 1.Memory embers us a smoky pastsentimental circle jerks andsomewhere jungle noisesthe combat brotherhood of beers—you know how hot the heart gets—five men line up firing blanksmom clutches a folded flag andsome girl in a sparkl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c9ec71a68759091b09c9000f7e6b3e7
http://journals.openedition.org/lisa/12976
http://journals.openedition.org/lisa/12976
Autor:
David F. Brown, Miroslav Micovic, Dayward Santos, Jesus Magadia, R. Bowen, Shawn D. Burnham, Robert Grabar, Joe Tai, Isaac Khalaf
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:480-485
HRL’s T3 GaN MMIC technology is evaluated using dc reliability experiments, including a voltage step-stress test, a temperature step-stress test, and a 3-temperature life test. The drain voltage step-stress test revealed three distinct regions of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6192ed1cc0d83bcc42f81e02568f8095
https://doi.org/10.1109/tsm.2017.2748921
https://doi.org/10.1109/tsm.2017.2748921
Publikováno v:
IEEE Electron Device Letters. 38:1445-1448
We have demonstrated highly scaled, self-aligned AlGaN/GaN fin-shaped field-effect transistors (FinFETs), which were fabricated using e-beam lithography and a regrown n+ GaN ohmic process with a sacrificial dummy gate. Our devices were very aggressiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92e709d25930d02a08c13c7f8d5e04c0
https://doi.org/10.1109/led.2017.2747843
https://doi.org/10.1109/led.2017.2747843
Autor:
David F. Brown
An illustrated history of the iconic aircraft, from its service during wartime to its appearances in Hollywood, plus a study of its design & construction. It has been said that “bombers make history; fighters make movies.” In the case of the Grum
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz
Autor:
Samuel Kim, David F. Brown, Andrea Corrion, Miroslav Micovic, Joel Wong, Adele E. Schmitz, Helen Fung, Keisuke Shinohara, D. Regan, Yan Tang
Publikováno v:
IEEE Electron Device Letters. 36:549-551
This letter reports record RF performance of deeply scaled depletion-mode GaN-high-electron-mobility transistors (GaN-HEMTs). Based on double heterojunction AlN/GaN/AlGaN epitaxial structure, fully passivated devices were fabricated by self-aligned-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52a2336588459150ccba7a28b06015b3
https://doi.org/10.1109/led.2015.2421311
https://doi.org/10.1109/led.2015.2421311