Zobrazeno 1 - 10
of 319
pro vyhledávání: '"David Esseni"'
Publikováno v:
Neuromorphic Computing and Engineering, Vol 4, Iss 3, p 034004 (2024)
A primary objective of Spiking Neural Networks is a very energy-efficient computation. To achieve this target, a small spike rate is of course very beneficial given the event-driven nature of such a computation. A network that processes information e
Externí odkaz:
https://doaj.org/article/1d3dd57b75cd4e649208dee63e065fb3
Autor:
Filippo Moro, Emmanuel Hardy, Bruno Fain, Thomas Dalgaty, Paul Clémençon, Alessio De Prà, Eduardo Esmanhotto, Niccolò Castellani, François Blard, François Gardien, Thomas Mesquida, François Rummens, David Esseni, Jérôme Casas, Giacomo Indiveri, Melika Payvand, Elisa Vianello
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-13 (2022)
The real-world object localization application needs a low-latency and power efficient computing system. Here, Moro et al. demonstrate a neuromorphic in-memory event driven system, inspired by the barn owl’s neuroanatomy, which is orders of magnitu
Externí odkaz:
https://doaj.org/article/642c7260a4084e1b9832c2fb898fd411
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 324-333 (2022)
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the development of ferroelectric based electron devices. This paper revisits the t
Externí odkaz:
https://doaj.org/article/a306f22c7ffc44e4b50cf6dfde8d42f3
Autor:
Riccardo Fontanini, Mattia Segatto, Marco Massarotto, Ruben Specogna, Francesco Driussi, Mirko Loghi, David Esseni Esseni
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1202-1209 (2021)
An in–house modeling framework for Ferroelectric Tunnelling Junctions (FTJ) is here presented in details. After a precise calibration again experiments, the model is exploited for an insightful study of the design of FTJs as synaptic devices for ne
Externí odkaz:
https://doaj.org/article/abff1f0ffb07401fa2146b6614938be0
Autor:
Sebastiano Strangio, Pierpaolo Palestri, DAVID Esseni, Luca Selmi, Felice Crupi, Simon Richter, Qing-Tai Zhao, Siegfried Mantl
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 223-232 (2015)
We use mixed device-circuit simulations to predict the performance of 6T static RAM (SRAM) cells implemented with tunnel-FETs (TFETs). Idealized template devices are used to assess the impact of device unidirectionality, which is inherent to TFETs an
Externí odkaz:
https://doaj.org/article/cfb1c397777144b4a0de5731e025fe2d
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 200-207 (2015)
Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density of states. To exploit these features for the design of a steep slope transistor, we propose a Two-dimensional heterojunct
Externí odkaz:
https://doaj.org/article/3ad25cd302494b9a9e00bde4534fae7e
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 86-87 (2015)
The increasing power consumption of integrated circuits is today the main impediment to the density scaling of integrated circuit technology. The reduction of supply voltage is the most effective way to reduce power; however, using modern transistors
Externí odkaz:
https://doaj.org/article/89f580b1151e4c9da0bb332de4b524b4
Publikováno v:
IEEE Transactions on Electron Devices. 70:3037-3042
Publikováno v:
IEEE Transactions on Electron Devices. 69:2188-2195