Zobrazeno 1 - 10 of 41 pro vyhledávání: '"David E. Seeger"'
1
Thin-film imaging: Past, present, prognosis
Autor: Maureen A. Hanratty, Roderick R. Kunz, Cesar M. Garza, David E. Seeger, Douglas C. La Tulipe
Publikováno v: IBM Journal of Research and Development. 41:105-118
As the limitations of conventional optical lithography approach, potential extensions of a current technology are examined more closely. One of these extensions is to limit the photoresist thickness that is needed for recording the imaging informatio
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f4ed38f2f96bb98987bccf9ab1aed55
https://doi.org/10.1147/rd.411.0105
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2
Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography
Autor: A. Bright, David E. Seeger, D. Patel, Karen Petrillo, T.J. Bucelot, P. Agnello, John Michael Warlaumont, Andrew Pomerene, R. Viswanathan, J. Conway, Patricia G. Blauner
Publikováno v: Microelectronic Engineering. 23:247-252
Fully functional 512Kb static-random access memory (SRAM) devices containing more than 3.6 million transistors have been successfully fabricated in a 0.25 μm complementary metal oxide semiconductor (CMOS) technology using compact storage ring X-ray
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::805341edbf7bb31a1351258f76c787e3
https://doi.org/10.1016/0167-9317(94)90148-1
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4
Resist materials and processes for X-ray lithography
Autor: David E. Seeger
Publikováno v: IBM Journal of Research and Development. 37:435-448
A key component that is sometimes overlooked in X-ray lithography is the resist material. The lithographic properties of these materials are extremely important if one is to take advantage of the superior lithographic performance often observed in X-
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b08a05c9c2d158c8d509aa63371261b
https://doi.org/10.1147/rd.373.0435
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5
Positive mode silylation process characterization
Autor: David E. Seeger, Andrew Pomerene, J.P. Simons, D.C. La Tulipe
Publikováno v: Microelectronic Engineering. 17:265-268
In this paper we wish to report on our progress in developing a positive TSI system with emphasis on what we believe is a novel approach for characterizing the silylation process.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b26024c9771c6b5533c3dfd5f381c5d
https://doi.org/10.1016/0167-9317(92)90053-t
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6
Fabrication challenges for next-generation devices: MEMS for rf wireless communications
Autor: Jennifer L. Lund, Raul E. Acosta, Lili Deligianni, Christopher V. Jahnes, Arpan P. Mahorowala, Joanna Rosner, David E. Seeger, Inna V. Babich, John M. Cotte, Paivikki Buchwalter, Panayotis C. Andricacos
Publikováno v: Emerging Lithographic Technologies VI.
With wireless communications becoming an important technology and growth engine for the semiconductor industry, many semiconductor companies are developing technologies that differentiate themselves in this space. One means of accomplishing this goal
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f023e1109d727d3fb3554b2b75859711
https://doi.org/10.1117/12.472298
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7
Extension of 248-nm optical lithography: a thin film imaging approach
Autor: Cindy Fairchok, Donald C. Hofer, Douglas Charles Latulipe, Karen Petrillo, Qinghuang Lin, Katherina Babich, Ahmad D. Katnani, Ratnam Sooriyakumaran, David E. Seeger, Gregory M. Wallraff, John P. Simons, C. DeWan, Timothy A. Brunner, Marie Angelopoulos
Publikováno v: SPIE Proceedings.
A negative-tone bilayer thin film imaged (TFI) resist has been developed for extension of 248 nm optical lithography to sub-150 nm regime. The bilayer TFI resist system consists of a thin (0.2 um) silicon containing top imaging layer and a thick (0.7
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a6d0b0b8a50d2c86aa438cfb87595db5
https://doi.org/10.1117/12.312417
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8
New family of non-chemically amplified resists
Autor: Ari Aviram, Edward D. Babich, Inna V. Babich, Marie Angelopoulos, David E. Seeger, Karen Petrillo
Publikováno v: SPIE Proceedings.
Non-chemically amplified resists offer advantages over chemically-amplified (CA) resists because they are less susceptible to temperature variations and contaminants. In order for non-CA resists to be viable, they have to perform lithographically at
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d01152448671a3f8b4d395d6f2251777
https://doi.org/10.1117/12.309589
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