Zobrazeno 1 - 8
of 8
pro vyhledávání: '"David E. Meharry"'
Publikováno v:
2008 IEEE MTT-S International Microwave Symposium Digest.
A Q-band MMIC power amplifier has been designed, processed, and measured with first pass success. Design parameters include 20 dBm power, 25 dB gain, 40 % PAE, input return loss of 10 dB and output return loss of 6 dB across 43.5 to 45.5 GHz. The MMI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98d1b4f3e998d6381f4339c10a047c2e
https://doi.org/10.1109/mwsym.2008.4633157
https://doi.org/10.1109/mwsym.2008.4633157
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
A comparison is presented of 4 to 18 GHz MMIC power amplifiers implemented in AlGaN-GaN HEMT and GaAs PHEMT with common circuit design technology. Both GaN and GaAs MMICs were designed as non-uniform distributed power amplifiers and achieved approxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff0bfdff98b525e6732975763aa32c04
https://doi.org/10.1109/mwsym.2007.379980
https://doi.org/10.1109/mwsym.2007.379980
Autor:
David E. Meharry, W. Kong
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
A general solution is presented to a classical problem in wideband distributed amplifiers, a noise figure characteristic that increases at low frequencies to values much higher than the underlying transistor noise capabilities. Early studies showed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::328093a2497bd8681fd190de06d8e81f
https://doi.org/10.1109/mwsym.2007.380301
https://doi.org/10.1109/mwsym.2007.380301
Autor:
David E. Meharry
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
A planar MMIC balun covering 2 to 20 GHz has been demonstrated with better than plusmn1.2 dB amplitude and plusmn9 degrees phase accuracy. This 1.2times1.5 mm2 circuit is a novel connection of a 2 to 7 GHz spiral coupled line balun, a 6 to 20 GHz cou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f770819a0e9f93fc6d238804636e457d
https://doi.org/10.1109/mwsym.2006.249395
https://doi.org/10.1109/mwsym.2006.249395
Autor:
Alice Vera, J. Fisher, K.H.G. Duh, P.M. Smith, Kenneth K. Chu, Robert J. Lender, L. Gunter, K. Nichols, D. Dugas, Dong Xu, L. Mt. Pleasant, David E. Meharry
Publikováno v:
25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..
This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69a6791019f81b1f16390cfe37e67628
https://doi.org/10.1109/gaas.2003.1252354
https://doi.org/10.1109/gaas.2003.1252354
Autor:
W. Kong, Robert J. Lender, A.W. Swanson, R. Actis, K. Nichols, P.M. Smith, D. Dugas, J. Fisher, L. MtPleasant, D. Pritchards, David E. Meharry
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).
This paper reviews the remarkable progress being made in the development of InP HEMT devices and circuits for high frequency analog applications. Despite possessing superior performance, widespread use of InP HEMTs has to date been hindered by their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::169d2658ae9802d7cad025bacc2ae635
https://doi.org/10.1109/gaas.2001.964334
https://doi.org/10.1109/gaas.2001.964334
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