Zobrazeno 1 - 3
of 3
pro vyhledávání: '"David Deckers"'
Autor:
Katja Viatkina, Owen Chen, Jae Gyoo Lee, Yong-Tae Cho, Marcus Carbery, Lucian Schmidt, Hemert Tom Van, Ik-Hyun Jeong, Marcus Musselman, Nang-Lyeom Oh, Hyun-Sok Kim, Heidi Kwon, Jae-Wuk Ju, Ssuwei Chen, David Deckers, Young-Sik Kim, Seung-Woo Koo, Heung-Joo Kim, Ruud de Wit
Publikováno v:
Advanced Etch Technology for Nanopatterning VIII.
With shrinking design rules, the overall patterning requirements are getting aggressively tighter and tighter, driving requirements for on-product overlay performance below 2.5nm and CD uniformity requirements below 0.8nm. Achieving such performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad8bc961623575e03b40f40442339950
https://doi.org/10.1117/12.2516578
https://doi.org/10.1117/12.2516578
Autor:
Jung-Joon Suh, Won-Kwang Ma, Kyu-Tae Sun, David Deckers, Honggoo Lee, Kevin Ryan, Jin-Moo Byun, Sangjun Han, Kou Weitian, Paul Böcker, Michiel Kupers, Noh-Jung Kwak, Young-Sik Kim, Young-Wan Lim, Gwang-Gon Kim, Elliott McNamara
Publikováno v:
SPIE Proceedings.
As DRAM semiconductor manufacturing approaches high volume for 1x nm nodes with immersion lithography, an increased emphasis is being placed on reducing the influence of the systematic wafer-level contribution to the on-product overlay budget. The co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e06bd49bcc0a5c6e360cdc737af6d44
https://doi.org/10.1117/12.2196879
https://doi.org/10.1117/12.2196879
Autor:
Auguste Lam, Arne Koopman, David Deckers, Maxime Gatefait, Jan Beltman, Richard Johannes Franciscus Van Haren, Alexander Ypma
Publikováno v:
SPIE Proceedings.
On-product overlay can be improved through the use of context data from the fab and the scanner. Continuous improvements in lithography and processing performance over the past years have resulted in consequent overlay performance improvement for cri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::082914c1b3674ebdc457b33fefdc2342
https://doi.org/10.1117/12.2085497
https://doi.org/10.1117/12.2085497