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pro vyhledávání: '"David DeKraker"'
Autor:
Christian Pizzetti, David DeKraker, Virginie Loup, Brent D. Schwab, Carlos Morote, Philippe Garnier, Marine Audouin, Laurence Gabette
Publikováno v:
Solid State Phenomena. 314:289-294
During silicide formation, unreacted NiPt metals is traditionally removed either by aqua regia (ESH concern) or SPM. This latter can easily degrade the device yield in HKMG (High K Metal Gate) nodes if the metal gates (usually TiN based) aren’t per
Publikováno v:
Solid State Phenomena. :277-280
Photoresist stripping in IC manufacturing has become more challenging as the number of photoresist levels has increased while at the same time allowable material loss and surface damage has decreased. Heavily implanted photoresist is especially chall
Autor:
David DeKraker, Michael Kocsis, Hiroie Matsumoto, Lior Huli, Benjamin L. Clark, Shan Hu, Michael Greer, Koichi Matsunaga, Masashi Enomoto, Richard A. Farrell, Jeffrey M. Lauerhaas, Andrew Grenville, Andrew Metz, Shinchiro Kawakami, Takashi Saito, David Hetzer, Anthony S. Ratkovich
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
Inpria is pioneering a novel approach to EUV photoresist. Directly patternable metal oxide thin films have shown resolution better than 10nm half-pitch, with robust etch resistance, and efficient use of photons through high EUV absorbance. Inpria’s