Zobrazeno 1 - 5
of 5
pro vyhledávání: '"David Cruau"'
Autor:
Scott Warrick, S. Gaugiran, Bénédicte Mortini, David Cruau, M. Benndorf, Romain Feilleux, C. Sourd, Vincent Farys
Publikováno v:
Microelectronic Engineering. 84:1054-1057
The main difference between dry and immersion lithography lies in the interactions between the immersion medium and photoresist. For example, it has been shown that resists components as PAG or base additive can leach into water. Such leaching could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe32a376ce1413a07a45a1296fb2c4a1
https://doi.org/10.1016/j.mee.2007.01.117
https://doi.org/10.1016/j.mee.2007.01.117
Autor:
David Cruau, Douglas G. Mitchell, Jianwen Steven Xu, Lakshmi N. Ramanathan, Jeff Chen, Virginie Beugin, Wentao Qin, Wei Liu
Publikováno v:
2009 59th Electronic Components and Technology Conference.
This paper presents a study on the contact resistance of interconnects between chip and package of embedded chip technology. Multi-layered aluminum/titanium tungsten/copper interconnects (Al/TiW/Cu) were used as the model system. Design of experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab63da7282201f617142b9425fdfb36
https://doi.org/10.1109/ectc.2009.5073995
https://doi.org/10.1109/ectc.2009.5073995
Autor:
Michael Benndorf, Vincent Farys, Scott Warrick, Karim Mestadi, Danilo DeSimone, Will Conley, Jan-Willem Gemmink, David Cruau
Publikováno v:
SPIE Proceedings.
Semiconductor manufacturers work hard to shrink critical dimensions in their device architectures and are in the midst of the 45nm node development. Generally, for the 65nm node, critical layers are processed using 193-nm scanners with numerical aper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8417bde10dfb046a9ed0843b37b180e
https://doi.org/10.1117/12.715987
https://doi.org/10.1117/12.715987
Autor:
Scott Warrick, K. Mestadi, David Cruau, S. Gaugiran, Michael Benndorf, Vincent Farys, Romain Feilleux, C. Sourd
Publikováno v:
23rd European Mask and Lithography Conference.
The introduction of immersion lithography in the production phase has been accompanied with high level of defects compared to standard process on dry lithography. Continuous process optimization allowed us to reduce the defectivity to dry lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2524577a182950b5dc77b5c578a490ff
https://doi.org/10.1117/12.736328
https://doi.org/10.1117/12.736328
Autor:
Jerome Belledent, Scott Warrick, Juan-Manuel Gomez, Alex Barr, Emmanuel Sicurani, Rob Morton, Jan-Willem Gemmink, Kevin Lucas, David Cruau, Valerie Plantier, Andrea Mauri, C. Monget, Will Conley, Jean-Damien Chapon
Publikováno v:
SPIE Proceedings.
Semiconductor manufacturers are in the midst of the next technology node C045 (65nm half-pitch) development. The difference this time is that the heavy lifting is being done while swimming. Generally, for the C065 node (hp90), critical layers will be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c305d13e3cf69552e7c67761b9ad7cd
https://doi.org/10.1117/12.657158
https://doi.org/10.1117/12.657158