Zobrazeno 1 - 10
of 114
pro vyhledávání: '"David C. Ingram"'
Autor:
Flavia P. N. Inbanathan, Katherine Leslee A. Cimatu, David C. Ingram, Uriel Joseph Erasquin, Kiran Dasari, Muhammad Shehzad Sultan, Muhammad Sajjad, Vladimir Makarov, Brad R. Weiner, Gerardo Morell, Payman Sharifi Abdar, Wojciech M. Jadwisienczak
Publikováno v:
Materials, Vol 16, Iss 9, p 3410 (2023)
Nitrogen-doped graphene quantum dots (NGQDs) have gained significant attention due to their various physical and chemical properties; however, there is a gap in the study of NGQDs’ magnetic properties. This work adds to the efforts of bridging the
Externí odkaz:
https://doaj.org/article/c2b926dbc26d466fa3a5cce8989f94fb
Autor:
Nikolaos Dimitrakopoulos, Georgios Perdikakis, Pelagia Tsintari, Carl R. Brune, Thomas N. Massey, Zach Meisel, Alexander Voinov, David C. Ingram, Panos Gastis, Yenuel Jones-Alberty, Shiv K. Subedi, Justin Warren, Kristyn H. Brandenburg, Nisha Singh, Lauren P. Ulbrich
Publikováno v:
EPJ Web of Conferences. 275:02003
40K is one of the main isotopes responsible for the radiogenic heating of the mantle in Earth-like exoplanets [1] and hence, plays a very important role in the internal geophysical dynamics of a planet. The abundance of 40K in the mantle and the core
Autor:
Ch. Dufour, Christophe Labbé, O. Blázquez, Wojciech M. Jadwisienczak, C. Guillaume, David C. Ingram, Baodan Liu, B. Garrido, F. Ehré, Xavier Portier, Julien Cardin, F. Gourbilleau
Publikováno v:
ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, IOP Science, 2019, 8 (12), pp.R157-R163. ⟨10.1149/2.0031912jss⟩
ECS Journal of Solid State Science and Technology, 2019, 8 (12), pp.R157-R163. ⟨10.1149/2.0031912jss⟩
ECS Journal of Solid State Science and Technology, IOP Science, 2019, 8 (12), pp.R157-R163. ⟨10.1149/2.0031912jss⟩
ECS Journal of Solid State Science and Technology, 2019, 8 (12), pp.R157-R163. ⟨10.1149/2.0031912jss⟩
International audience; Ce-doped SiO x N y and SiAlON matrices are promising materials for blue LED applications. The uniqueness of this approach stems from the fact that SiO x N y , as a host, combines specific properties of individual SiO x and SiN
Autor:
Wojciech M. Jadwisienczak, Christian Dufour, Larysa Khomenkova, Christophe Labbé, Florian Ehre, Xavier Portier, Cédric Frilay, Xavier Marie, Fabrice Gourbilleau, David C. Ingram, Julien Cardin, Philippe Marie, Hervé Rinnert, Ing-Song Yu, Delphine Lagarde
Publikováno v:
237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020)
237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), May 2020, Montreal, Canada. pp.1064-1064, ⟨10.1149/ma2020-01161064mtgabs⟩
237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020) May 10, 2020-May 14
237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020) May 10, 2020-May 14, May 2020, Montreal (Canada), Canada. pp.1064-1064, ⟨10.1149/MA2020-01161064mtgabs⟩
237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), May 2020, Montreal, Canada. pp.1064-1064, ⟨10.1149/ma2020-01161064mtgabs⟩
237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020) May 10, 2020-May 14
237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020) May 10, 2020-May 14, May 2020, Montreal (Canada), Canada. pp.1064-1064, ⟨10.1149/MA2020-01161064mtgabs⟩
Rare earth (RE) doped silicon host matrices have been largely investigated to produce their luminescence's at different wavelengths for many applications such as Light Emitting Diode (LED) or frequency conversion layer to improve Solar Cells (SCs) ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa829db2ae100ede753cb798656e70a2
https://hal.science/hal-03792557
https://hal.science/hal-03792557
Autor:
Arthur R. Smith, A. L. Richard, Joseph Corbett, David C. Ingram, Noboru Takeuchi, Jonathan Guerrero-Sanchez
Publikováno v:
Applied Surface Science. 422:985-989
We report on the surface reconstructions of L10-ordered MnGa (001) thin films grown by molecular beam epitaxy on a 50 nm Mn3N2 (001) layer freshly grown on a magnesium oxide (001) substrate. Scanning tunneling microscopy, Auger electron spectroscopy,
Autor:
Fengyuan Yang, David C. Ingram, Joseph Corbett, Andrew Foley, Alam Khan, Arthur R. Smith, A. L. Richard, James C. Gallagher, Lianshui Zhao
Publikováno v:
Journal of Magnetism and Magnetic Materials. 439:236-244
Single phase e -Mn4N thin and ultrathin films are grown on MgO(001) using molecular beam epitaxy. Reflection high-energy electron diffraction and out-of-plane X-ray diffraction measurements are taken for each sample in order to determine the in- and
Publikováno v:
Materials Today Communications. 11:147-155
The growth mechanism of coal derived graphene films synthesized via chemical vapor deposition on copper substrates was investigated utilizing Raman spectroscopy, X-ray photoelectron spectroscopy, selected area electron diffraction, optical microscopy
Autor:
David C. Ingram, Juvinch R. Vicente, Martin E. Kordesch, Jixin Chen, Joseph R. Pyle, Kurt Waldo E. Sy Piecco
Publikováno v:
ACS Appl Electron Mater
Patterning semiconducting materials are important for many applications such as microelectronics, displays, and photodetectors. Lead halide perovskites are an emerging class of semiconducting materials that can be patterned via solution-based methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9074f9ae28bedf0e454a2823ef85da0
https://doi.org/10.26434/chemrxiv.8966297
https://doi.org/10.26434/chemrxiv.8966297
Autor:
Martin E. Kordesch, Chandrasiri A. Ihalawela, Mayur Sundararajan, David C. Ingram, Xiao-Min Lin, Gang Chen, Kevin Cooper
Publikováno v:
physica status solidi (b). 258:2000428
Publikováno v:
Journal of Crystal Growth. 446:60-67
Single phase e-Mn4N and ζ-Mn10N thin films are grown on MgO(001) using molecular beam epitaxy. The films are identified and characterized using reflection high-energy electron diffraction, x-ray diffraction, back scattered electron scanning electron