Zobrazeno 1 - 10
of 64
pro vyhledávání: '"David C. Hays"'
Autor:
Patrick H. Carey IV, Jiancheng Yang, F. Ren, David C. Hays, S. J. Pearton, Soohwan Jang, Akito Kuramata, Ivan I. Kravchenko
Publikováno v:
AIP Advances, Vol 7, Iss 9, Pp 095313-095313-6 (2017)
AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmissio
Externí odkaz:
https://doaj.org/article/727658906e094e1192d9ed7f1a44d219
Autor:
Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology A. 41:023205
There is increasing interest in α-polytype Ga2O3 for power device applications, but there are few published reports on dielectrics for this material. Finding a dielectric with large band offsets for both valence and conduction bands is especially ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::003b4232cd75cfc175bb30b1ee5aa831
https://doi.org/10.1116/6.0002453
https://doi.org/10.1116/6.0002453
Autor:
Jian-Sian Li, Xinyi Xia, Chao-Ching Chiang, David C. Hays, Brent P. Gila, Valentin Craciun, Fan Ren, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology A. 41:013405
The characteristics of sputtered NiO for use in pn heterojunctions with Ga2O3 were investigated as a function of sputtering parameters and postdeposition annealing temperature. The oxygen/ nickel and Ni2O3/NiO ratios, as well as the bandgap and resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a18d8035272ecf449424ff98e8796798
https://doi.org/10.1116/6.0002250
https://doi.org/10.1116/6.0002250
Autor:
Xinyi Xia, Jian-Sian Li, Md Irfan Khan, Kamruzzaman Khan, Elaheh Ahmadi, David C. Hays, Fan Ren, S. J. Pearton
Publikováno v:
Journal of Applied Physics. 132:235701
The band alignments of two candidate dielectrics for ScAlN, namely, SiO2 and Al2O2, were obtained by x-ray photoelectron spectroscopy. We compared the effect of deposition method on the valence band offsets of both sputtered and atomic layer depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7572b4124d32311f535c2c52dedb1add
https://doi.org/10.1063/5.0131766
https://doi.org/10.1063/5.0131766
Autor:
Stephen J. Pearton, Chaker Fares, Brent P. Gila, Holger von Wenckstern, Marius Grundmann, Marko J. Tadjer, Fan Ren, Max Kneiss, David C. Hays
Publikováno v:
ECS Transactions. 92:79-88
β-Ga2O3 is a wide bandgap semiconductor (~4.8 eV) with properties suited to power electronics, truly solar-blind UV detection, and extreme environment applications. Additional bandgap tunability can be achieved through incorporation of Al into β-Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bd3bbf7caab08bf2dd396a009d60e31
https://doi.org/10.1149/09207.0079ecst
https://doi.org/10.1149/09207.0079ecst
Publikováno v:
Journal of Electronic Materials. 48:1568-1573
The wide-bandgap ternary (AlxGa1−x)2O3 forms a heterostructure system with Ga2O3 that is attracting attention for modulation-doped field-effect transistors. The options for gate dielectric on (AlxGa1−x)2O3 are limited by the need for adequate ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::695deaf80de2d56e5f08c81c3cc0069e
https://doi.org/10.1007/s11664-018-06885-x
https://doi.org/10.1007/s11664-018-06885-x
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q3001-Q3006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ead9fb125fc3f1b2e750bb16c623330
https://doi.org/10.1149/2.0021907jss
https://doi.org/10.1149/2.0021907jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P519-P523
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697d8e473e71d14b2b2e58d4ded13a92
https://doi.org/10.1149/2.0041810jss
https://doi.org/10.1149/2.0041810jss
Autor:
Fan Ren, Soohwan Jang, Stephen J. Pearton, Patrick H. Carey, Brent P. Gila, David C. Hays, Akito Kuramata
Publikováno v:
Applied Surface Science. 422:179-183
The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::412a681fa8d1af66b9f18489bb063073
https://doi.org/10.1016/j.apsusc.2017.05.262
https://doi.org/10.1016/j.apsusc.2017.05.262
Autor:
Shihyun Ahn, Soohwan Jang, Jiancheng Yang, Stephen J. Pearton, Jihyun Kim, Patrick H. Carey, Akito Kuramata, David C. Hays, Fan Ren
Publikováno v:
ECS Transactions. 80:959-972
Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. There have been many recent advances on both the materials and pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3df3455d603d71be3abe485dd0b9c506
https://doi.org/10.1149/08010.0959ecst
https://doi.org/10.1149/08010.0959ecst