Zobrazeno 1 - 8
of 8
pro vyhledávání: '"David B. Saint John"'
Publikováno v:
SPIE Proceedings.
Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc72ee82fc28960fda851a155f88e668
https://doi.org/10.1117/12.2053174
https://doi.org/10.1117/12.2053174
Autor:
Mark W. Horn, David B. Saint John, Nikolas J. Podraza, Hitesh A. Basantani, Thomas N. Jackson
Publikováno v:
SPIE Proceedings.
Vanadium oxide (VOx) and hydrogenated silicon germanium (SixGe1-x) are the two predominant thin film material systems used as the active layer in resistive infrared imaging. Thin films of VOx used in microbolometers have a resistivity typically betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb1381a721e0c82f9c6467473ed41e61
https://doi.org/10.1117/12.2054652
https://doi.org/10.1117/12.2054652
Publikováno v:
ACS applied materialsinterfaces. 6(10)
We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd257300f750902297b7f84d418e68ef
https://pubmed.ncbi.nlm.nih.gov/24818868
https://pubmed.ncbi.nlm.nih.gov/24818868
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
High efficiency thin film silicon solar cells consist of multiple junctions with hydrogenated amorphous silicon, silicon germanium alloys, and nanocrystalline silicon (nc-Si:H) absorbers. Uniformity over large areas is challenging for nc-Si:H and an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d82216d401f896c48da053ba68e122d
https://doi.org/10.1109/pvsc.2012.6317635
https://doi.org/10.1109/pvsc.2012.6317635
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
Amorphous hydrogenated silicon (a-Si:H) thin films have found use in photovoltaic, transistor, and microbolometer applications. Routine optical metrology of a-Si:H is generally performed in the visible range but is not directly sensitive to hydrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b42098342f6a3c55de929d899a84e32
https://doi.org/10.1109/pvsc.2012.6318239
https://doi.org/10.1109/pvsc.2012.6318239
Autor:
Elizabeth C. Dickey, Nikolas J. Podraza, Jing Li, Christopher R. Wronski, David B. Saint John, Robert W. Collins
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
The growth of hydrogenated silicon germanium alloy (Si 1−x Ge x :H) films by plasma enhanced chemical vapor deposition (PECVD) has been investigated using real time spectroscopic ellipsometry (RTSE) to understand the effect of incorporated Ge on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd80a9cd2f52bafb94dbd03af55fa5a6
https://doi.org/10.1109/pvsc.2010.5616039
https://doi.org/10.1109/pvsc.2010.5616039
Publikováno v:
Optical Engineering. 54:037101
Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 Ω · cm with a temperature coefficient of re- sistance (TCR) from −1.7% to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe1ea83202207e57055db9d61dc12ba
https://doi.org/10.1117/1.oe.54.3.037101
https://doi.org/10.1117/1.oe.54.3.037101
Autor:
Paul Witherell, Long Qing Chen, Zi Kui Liu, David B. Saint John, Shaw C. Feng, Richard Martukanitz, Pan Michaleris, Timothy W. Simpson
Publikováno v:
Publons
Web of Science
Web of Science
Though the advanced manufacturing capabilities offered by additive manufacturing (AM) have been known for several decades, industry adoption of AM technologies has been relatively slow. Recent advances in modeling and simulation of AM processes and m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27a45d46e7050c668b402197cc33e335
https://publons.com/publon/28522817/
https://publons.com/publon/28522817/
