Výsledky vyhledávání - "David Alamarguy"

Akademický článek

Fast and Uncooled Semiconducting Ca-Doped Y-Ba-Cu-O Thin Film-Based Thermal Sensors for Infrared

Autor: Annick Dégardin, David Alamarguy, Aurore Brézard Oudot, Samir Beldi, Christine Chaumont, Faouzi Boussaha, Antoine Cheneau, Alain Kreisler

Publikováno v: Sensors, Vol 23, Iss 18, p 7934 (2023)

YBa2Cu3O6+x (YBCO) cuprates are semiconductive when oxygen depleted (x < 0.5). They can be used for uncooled thermal detection in the near-infrared: (i) low temperature deposition on silicon substrates, leading to an amorphous phase (a-YBCO); (ii) py

Externí odkaz: https://doaj.org/article/c60a252824074104aa1e0bebe208a0f4

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Akademický článek

Effect of the Al2O3 Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface

Autor: Joanna Njeim, David Alamarguy, Xiaolong Tu, Alan Durnez, Xavier Lafosse, Pascal Chretien, Ali Madouri, Zhuoxiang Ren, David Brunel

Publikováno v: ACS Omega, Vol 5, Iss 26, Pp 15828-15834 (2020)

Externí odkaz: https://doaj.org/article/9171f985974147c9bafaf935d5404b47

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Effect of Solution Concentration on ZnO/ZnAl2O4 Nanocomposite Thin Films Formation Deposited by Ultrasonic Spray Pyrolysis on Glass and Si(111) Substrates

Autor: Chahra Boukaous, Sabrina Iaiche, David Alamarguy, Djamel Hamana, Abdelkader Djelloul

Publikováno v: Journal of Nano Research. 63:10-30

A complex ZnO/ZnAl2O4 heterostructures thin films on glass and Si (111) substrates have been successively obtained by a soft ultrasonic spray pyrolysis (USP) method deposition using the Zn/Al molar ratios concentrations of 0.07/0.13 and 0.1/0.1, resp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ef46890f845fad3de89833743afba54
https://doi.org/10.4028/www.scientific.net/jnanor.63.10

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Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration

Autor: Aleksandra Bojar, Davide Regaldo, José Alvarez, David Alamarguy, Vesselin Donchev, Stefan Georgiev, Philip Schulz, Jean-Paul Kleider

Publikováno v: EPJ Photovoltaics. 13:18

In this study we analysed halide perovskite films deposited directly on crystalline silicon by means of two set-ups using different operating modes of the surface photovoltage (SPV) methods, i.e., the Kelvin probe force microscopy (KPFM) and the meta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa4ad823e9ec4c2c5d625e6108917557
https://doi.org/10.1051/epjpv/2022016

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Imaging the defect distribution in 2D hexagonal boron nitride by tracing photogenerated electron dynamics

Autor: Alexandre Jaffre, Yuta Suzuki, Mohamed Boutchich, Hong Wang, Songyan Hou, David Alamarguy, Edwin Hang Tong Teo, Beng Kang Tay, Keiki Fukumoto, Muhammad Danang Birowosuto

Publikováno v: Journal of Physics D: Applied Physics. 53:405106

Hexagonal boron nitride (hBN) has become a prominent material for nanophotonic and quantum technology studies. Its wide bandgap can accommodate room temperature radiative optical transitions originating from defect states in different atomic structur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b7b0a8f559b6ecf178959a2266acbd0
https://doi.org/10.1088/1361-6463/ab9860

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Integration of fluorographene trapping medium in MoS2-based nonvolatile memory device

Autor: Chao-Sung Lai, Mohamed Boutchich, Mamina Sahoo, David Alamarguy, Haneen Abushammala, Alexandre Jaffre, Yu Jiang, Kai-Ping Chang

Publikováno v: Journal of Applied Physics. 127:245106

Graphene and 2D analogs such as transition metal dichalcogenides (TMDCs) have been widely investigated for their tuneable electronic properties. There is a large spectrum of applications of such 2D analogs; for example, non-volatile memory, which is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62ff4ea7a813123aabb9dd1cc95f8c5c
https://doi.org/10.1063/1.5126793

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High structural and optical quality of III-V-on-Si 1.2 nm-thick oxide-bonded hybrid interface

Autor: Grégoire Beaudoin, David Alamarguy, Gilles Patriarche, Anne Talneau

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2018, 192, pp.25-29. ⟨10.1016/j.mee.2018.02.007⟩

In order to be compatible with CMOS processing, hybrid bonding of III-V materials on Silicon should be operated at 300 °C, which requires an interface layer. The thinnest layer could be obtained when surfaces are prepared oxide-free and activated. W

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69d685bd08bb514da85711a1f8f099c8
https://hal-centralesupelec.archives-ouvertes.fr/hal-01806556

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Fretting behaviour of tinned connectors under grease lubrication

Autor: Aurore Brézard-Oudot, Pascal Chrétien, David Alamarguy, S. Noel

Publikováno v: 2017 IEEE Holm Conference on Electrical Contacts
2017 IEEE Holm Conference on Electrical Contacts, Sep 2017, Denver, United States. pp.109-116, ⟨10.1109/HOLM.2017.8088072⟩

International audience; Fretting is a well known phenomena due to unwanted micro displacements leading to drastic electrical contact resistance increase. Much work has been done to understand and evaluate the critical parameters in view of finding so

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b116556f3b1bcc7e4966c3cbcbd132a1
https://doi.org/10.1109/holm.2017.8088072

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Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

Autor: Walid El-Huni, Anne Migan, Zakaria Djebbour, David Alamarguy

Publikováno v: EPJ Photovoltaics
EPJ Photovoltaics, 2017, 8, ⟨10.1051/epjpv/2017003⟩
EPJ Photovoltaics, EDP sciences, 2017, 8, ⟨10.1051/epjpv/2017003⟩
EPJ Photovoltaics, Vol 8, p 85502 (2017)

International audience; Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic lay

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c1c0067ed0ff84538b37ebbf5d23bd1
https://hal.science/hal-01570086/document

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Influence of ambient gas pressure and carbon adsorption on dark current emission from a cathode

Autor: František Karlický, Maykel Márquez-Mijares, Fabien Bayle, Didier Lemoine, Philippe Testé, Bruno Lepetit, Khaled Almaksour, Michael J. Kirkpatrick, Philippe Dessante, Emmanuel Odic, David Alamarguy

Publikováno v: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2016, 34 (6), ⟨10.1116/1.4966621⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2016, 34 (6), ⟨10.1116/1.4966621⟩

Electronic field emission current (dark current) from surfaces under vacuum at high field strengths can be reduced by the injection of gas into the ambient volume. A possible reversible mechanism responsible for this gas effect is proposed. The mecha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1f0b5442fe4f5710c74cd55e511e5da
https://centralesupelec.hal.science/hal-01415362

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