Zobrazeno 1 - 10
of 15
pro vyhledávání: '"David Adolph"'
Publikováno v:
APL Materials, Vol 4, Iss 8, Pp 086106-086106-8 (2016)
We demonstrate crack-free ZnO/GaN distributed Bragg reflectors (DBRs) grown by hybrid plasma-assisted molecular beam epitaxy using the same growth chamber for continuous growth of both ZnO and GaN without exposure to air. This is the first time these
Externí odkaz:
https://doaj.org/article/352578f250294cc39039fd7b5910a4a1
Autor:
Olof Bäcke, Ehsan Hashemi, David Adolph, Mats Halvarsson, Åsa Haglund, Tommy Ive, Filip Hjort
Publikováno v:
IEEE Journal of Quantum Electronics. 54:1-6
We have demonstrated an electrically conductive ZnO/GaN multilayer structure using hybrid plasma-assisted molecular beam epitaxy. Electrical I-V characteristics were measured through the top three pairs of a six pair ZnO/GaN sample. The total measure
Autor:
Niklas Rorsman, Jr-Tai Chen, Einar Ö. Sveinbjörnsson, Mattias Thorsell, Olof Kordina, David Adolph, Johan Bergsten
Publikováno v:
IEEE Transactions on Electron Devices. 65:2446-2453
This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used to grow two C-doped structures with different doping profiles, usin
Autor:
David Adolph, Tommy Ive
Publikováno v:
physica status solidi (b). 253:1523-1528
We studied the effects of a varying O$ flow rate on the growth of ZnO(0001) and ZnO(000-1) layers on GaN/Al2O3-templates by plasma-assisted molecular beam epitaxy. The O2 flow rate through the O-plasma source was varied between 0.25--4.5 standard cub
Publikováno v:
Journal of Crystal Growth. 426:129-134
Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating
Publikováno v:
Frontiers of Materials Science. 9:185-191
Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before ini
Publikováno v:
SPIE Proceedings.
III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult to achieve. A promising material combination for conductiv
Autor:
Tommy Ive, David Adolph
Publikováno v:
Applied Surface Science. 307:438-443
Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/Al2O3 templates and GaN/4H-SiC(0001) layers. The GaN(0001)/Al2O3 template surfaces were subjected to various pre-treatment procedures (Zn, Ga or N pre-exposure or n
Autor:
Patrick Carlberg, Lars Montelius, Dan Hessman, David Adolph, Sara Ghatnekar-Nilsson, Mariusz Graczyk, Hongqi Xu, Zhongfan Liu, Gang Luo, Tao Zhu, Ivan Maximov
Publikováno v:
Nanotechnology. 17:1906-1910
We report on the realization of a novel interdigitated cantilever array with electrostatic control of the shape of the interdigitated array. It consists of an array of SiO2/metal double-finger cantilevers in a grating configuration together with an e
Autor:
Tommy Ive, Ehsan Hashemi, Olof Bäcke, Vincent Desmaris, A. Lotsari, Filip Hjort, Martin Stattin, Denis Meledin, David Adolph, Mats Halvarsson, Åsa Haglund
Publikováno v:
Applied Physics Express. 10:055501
We have investigated the effect of strain-compensating interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors (DBRs). Samples with 10.5 mirror pairs were grown through plasma-assisted molecular beam epita