Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Dave Reid"'
Autor:
Mary White, Rachel Pelly, Jane Le, Lucy Dove, Sarah Connolly, Alice Morgan, Dave Reid, Ric Haslam, Harriet Hiscock
Publikováno v:
Archives of disease in childhood.
ObjectiveTo determine the (1) feasibility and acceptability of administering single question mental health surveillance to carers of children with chronic disease in the inpatient setting and (2) sensitivity, specificity, positive predictive value (P
Autor:
Dave Reid
A Guarded Hot Plate (GHP) appartus was designed and built for high temperatue applications, consistent with or better than the established standards. This apparatus consists of a hot and a cold plate, attached to a frame, which allows the plates to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2488f7f422e939a7acce0f0e89c3b64b
https://doi.org/10.32920/ryerson.14653422
https://doi.org/10.32920/ryerson.14653422
Publikováno v:
Rindorf, A, Gislason, H & Reid, D 2019, Are fish sensitive to trawling recovering in European waters? in ASC abstracts and CM-documents 2019 ., H:634, International Council for the Exploration of the Sea (ICES), ICES Annual Science Conference 2019, Gothenburg, Sweden, 09/09/2019 .
Technical University of Denmark Orbit
Technical University of Denmark Orbit
For the past couple of decades, the fishing pressure induced by towed demersal gear has decreased and this decrease may have allowed the number of sensitive fish in the sea to increase. Here we use the fact that the sensitivity of fish to trawl induc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::fc5b9ab6734609bbcd2e8b37a0976569
https://orbit.dtu.dk/en/publications/f4e3d020-e652-4a3c-af2c-ebad5a801124
https://orbit.dtu.dk/en/publications/f4e3d020-e652-4a3c-af2c-ebad5a801124
Publikováno v:
IEEE Transactions on Electron Devices. 62:3133-3138
Write time is a critical component of memory performance, which often defines cycle time. In order to accurately predict static random access memory (SRAM) performance, it is also important to take temporal degradation effects into account. This pape
Autor:
Campbell Millar, Salvatore Maria Amoroso, Michael Hargrove, Binjie Cheng, Ken Greiner, Asen Asenov, Louis Gerrer, Razaidi Hussin, David M. Fried, Craig Alexander, Dave Reid, Andrew R. Brown
Publikováno v:
IEEE Transactions on Electron Devices. 62:1739-1745
In this paper we illustrate how the predictive Technology Computer Aided Design (TCAD) process device simulation can be used to evaluate process, statistical, and time-dependent variability at the early stage of the development of new technology. Thi
Autor:
Campbell Millar, Dave Reid, Asen Asenov, Fikru Adamu-Lema, Salvatore Maria Amoroso, Razaidi Hussin, Louis Gerrer, Jie Ding
Publikováno v:
Microelectronics Reliability. 54:682-697
In this paper we summarize the impact of Statistical Variability (SV) on device performances and study the impact of oxide trapped charges in combination with SV. Traps time constants are described and analysed in combination with SV and time depende
Publikováno v:
IEEE Transactions on Electron Devices. 58:2257-2265
Using full-scale 3-D simulations of 100 000s of devices, enabled by “push-button” cluster technology, we study in detail statistical threshold voltage variability in a state-of-the-art n-channel MOSFET introduced by the combined effect of random
Publikováno v:
IEEE Transactions on Electron Devices. 57:2808-2813
In this paper, we examine, in more detail, the strong correlation between the distribution of threshold voltage (VT) and the average channel length (LC) discovered in Part I of this paper. Based on the results of statistical analysis, we investigate
Publikováno v:
IEEE Transactions on Electron Devices. 57:2801-2807
In this paper, using computationally intensive 3-D simulations in a grid computing environment, we perform a detailed study of line-edge-roughness (LER)-induced threshold voltage variability in contemporary MOSFETs. Statistical ensembles of tens of t
Publikováno v:
IEEE Transactions on Electron Devices. 56:2255-2263
Using the Glasgow ldquoatomisticrdquo simulator, we have performed 3D statistical simulations of random-dopant-induced threshold voltage variation in state-of-the-art 35- and 13-nm bulk MOSFETs consisting of statistical samples of 105 or more microsc