Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Dave Krick"'
Autor:
Dave Krick, Eberhard Spiller, Patrick A. Kearney, Soon-Cheon Seo, Paul Mirkarimi, Rajul Randive, Andy Ma, San-In Han, Toshiyuki Uno
Publikováno v:
Microelectronic Engineering. 83:695-698
Extreme ultraviolet lithography (EUVL) is the leading lithography technology to fabricate critical feature sizes of 32nm and smaller. For EUVL a Mo/Si multilayer-based reflective optical system is used and the development of suitable, defect-free mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40947633a5ba498254bf4601f9807319
https://doi.org/10.1016/j.mee.2006.01.204
https://doi.org/10.1016/j.mee.2006.01.204
Autor:
Sang-In Han, Soon-Cheon Seo, Jan F. W. Cavelaars, Dave Krick, Patrick A. Kearney, John Maltabes
Publikováno v:
SPIE Proceedings.
One of the main challenges for EUV mask blank metrology is that most tools are designed for either; 1) wafer handling, 2) off-line characterization, or 3) destructive failure analysis. Few clean room-compatible metrology tools for full EUV mask blank
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e46454e870ff825aeb89b81bd6d29ff8
https://doi.org/10.1117/12.598860
https://doi.org/10.1117/12.598860
Autor:
P. B. Mirkarimi, Rajul Randive, Dave Krick, Patrick A. Kearney, Ira Reiss, Andy Ma, Eberhard Spiller
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is the leading next generation lithography (NGL) technology to succeed optical lithography at the 32 nm nodes and beyond. The technology uses a multilayer-based reflective optical system and the development of s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44a3833efa3b1d8ac65efc533a3f935
https://doi.org/10.1117/12.599936
https://doi.org/10.1117/12.599936