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Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs
Autor:
Trevor P. Martin, Martin Kuball, Johan Bergsten, Richard Marc Perks, Michael J. Uren, Richard F. Webster, Niklas Rorsman, Hassan Hirshy, Dave Cherns, Paul J. Tasker, Alexander Pooth
Publikováno v:
Pooth, A, Bergsten, J, Rorsman, N, Hirshy, H, Perks, R, Tasker, P, Martin, T, Webster, R F, Cherns, D, Uren, M J & Kuball, M 2017, ' Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs ', Microelectronics Reliability, vol. 68, pp. 2-4 . https://doi.org/10.1016/j.microrel.2016.11.002
The morphology and impact on leakage currents of two different ohmic metal stacks for GaN based transistor devices is investigated in this work. The results have implications for the performance and reliability of a GaN transistor device. A low tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36443253fd571fd21256501ebdf2d1d5
https://hdl.handle.net/1983/6efe82d0-cdc1-46c9-84d8-4fa98110ac2d
https://hdl.handle.net/1983/6efe82d0-cdc1-46c9-84d8-4fa98110ac2d