Low‐Temperature Processing to Obtain Contact Resistance of <0.03 Ohm mm to Boron‐Doped Diamond.

Autor: Hardy, Aaron¹ (AUTHOR) ahardy@fraunhofer.org, Geis, Michael W.² (AUTHOR) geis@LL.mit.edu, Daulton, Jeffery W.² (AUTHOR), Turner, George W.² (AUTHOR), Polking, Mark J.² (AUTHOR), Liddell, John² (AUTHOR), Nebiolo, Emily² (AUTHOR), Myszka, Michael² (AUTHOR), Hollis, Mark A.² (AUTHOR), Ivanov, Tony G.³ (AUTHOR), Birdwell, A. Glen³ (AUTHOR), Ruzmetov, Dmitry³ (AUTHOR), Weil, James³ (AUTHOR), Jankowski, Nicholas R.³ (AUTHOR), Grotjohn, Timothy A.⁴ (AUTHOR), Zhang, Beijia² (AUTHOR)

Publikováno v: Physica Status Solidi. A: Applications & Materials Science. Dec2024, p1. 7p. 10 Illustrations.