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pro vyhledávání: '"Daudin, B"'
The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model
Externí odkaz:
http://arxiv.org/abs/1601.04942
Autor:
Cardoso, J., Jacopin, G., Faye, D.Nd., Siladie, A.M., Daudin, B., Alves, E., Lorenz, K., Monteiro, T., Correia, M.R., Ben Sedrine, N.
Publikováno v:
In Applied Materials Today March 2021 22
Autor:
Balocchi, A., Renard, J., Nguyen, C. T., Gayral, B., Amand, T., Mariette, H., Daudin, B., Tourbot, G., Marie, X.
We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin rel
Externí odkaz:
http://arxiv.org/abs/1107.5644
Autor:
Rol, F., Founta, S., Mariette, H., Daudin, B., Dang, Le Si, Bleuse, J., Peyrade, D., Gerard, J. -M., Gayral, B.
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral di
Externí odkaz:
http://arxiv.org/abs/cond-mat/0611625
The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are studied in te
Externí odkaz:
http://arxiv.org/abs/cond-mat/0509016
Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of grazing incidence Multi-wavelength Anomalous Di raction (MAD) in both t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0508126
Publikováno v:
Phys. Rev. B 70, 125427 (2004)
We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN g
Externí odkaz:
http://arxiv.org/abs/cond-mat/0311050
We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0304157
Autor:
Adelmann, C., Sarigiannidou, E., Jalabert, D., Hori, Y., Rouviere, J. -L., Daudin, B., Fanget, S., Bru-Chevallier, C., Shibata, T., Tanaka, M.
We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range bet
Externí odkaz:
http://arxiv.org/abs/cond-mat/0304124
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