Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Dasen Ren"'
Autor:
Yang Zhang, Dasen Ren
Publikováno v:
Molecules, Vol 28, Iss 4, p 1917 (2023)
Significant progress has been made in understanding the reactivity and catalytic activity of gas-phase and loaded gold clusters for CO oxidation. However, little research has focused on mixed silicon/gold clusters (SiAun) for CO oxidation. In the pre
Externí odkaz:
https://doaj.org/article/2fcb3b5af23245158533abbdf5092ddc
Publikováno v:
Molecules, Vol 27, Iss 5, p 1714 (2022)
In this paper, we performed the ωB97XD/def2-TZVP method with a density functional theory study on the boron–nitrogen (BN) analogues of cyclo[18]carbon. The geometric structure, polarization properties, and excitation effect were calculated in the
Externí odkaz:
https://doaj.org/article/d83fc154cd7843919a6d7df7ace6a439
Publikováno v:
Molecules. Mar2022, Vol. 27 Issue 5, p1-14. 14p. 8 Diagrams, 4 Charts, 4 Graphs.
Publikováno v:
physica status solidi (a).
Autor:
Xupu, Wu, Dasen, Ren
Publikováno v:
Molecules (Basel, Switzerland). 27(5)
In this paper, we performed the ωB97XD/def2-TZVP method with a density functional theory study on the boron-nitrogen (BN) analogues of cyclo[18]carbon. The geometric structure, polarization properties, and excitation effect were calculated in the pr
Top-gate In–Al–Zn–O thin film transistor based on organic poly(methyl methacrylate) dielectric layer
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:11976-11983
In this paper, we report a top-gate amorphous In–Al–Zn–O (a-IAZO) thin film transistor (TFT) based on dip-coated poly(methyl methacrylate) (PMMA) dielectric layer and investigate PMMA thickness influence on a-IAZO TFT performance. A thinner PMM
Publikováno v:
Journal of Alloys and Compounds. 728:767-772
High lithium storage capacity and high conductivity of the LIB anode materials are extremely desirable for lithium-ion batteries (LIBs). Herein, the article demonstrated the method of embedding single or few layers 2D MoS 2 into e-spun carbon nanofib
Publikováno v:
EPL (Europhysics Letters). 131:67002
The thin-film transistors (TFTs) using the pulsed-plasma-deposition–prepared amorphous Zn-Sn-O (a-ZTO) as active layer and the dip-coated polymethylmethacrylate (PMMA) as gate insulator were fabricated. The results display that the PMMA film shows
Publikováno v:
Energy Technology. 8:1900685
Publikováno v:
Energy Technology. 7:1800652