Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Daryoosh Dideban"'
Publikováno v:
Ain Shams Engineering Journal, Vol 12, Iss 1, Pp 755-760 (2021)
Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-FET) with a silicon channel utilizing a sectorial cross section is evaluated in terms of Ion/Ioff current ratio, transconductance, subthreshold slope, th
Externí odkaz:
https://doaj.org/article/716b1eb57e4b4895b650b69f3d915b93
Publikováno v:
IEEE Access, Vol 9, Pp 65340-65345 (2021)
In this paper, we model statistical correlation between overshooting effect and propagation delay time in nano-CMOS technology considering the influence of intrinsic parameter fluctuations caused by discreteness of charge and granularity of matter. T
Externí odkaz:
https://doaj.org/article/0a6fb8e5009248eeadf346cb2a6deaec
Publikováno v:
Results in Physics, Vol 18, Iss , Pp 103333- (2020)
Density functional theory (DFT) has been used to investigate doped armchair germanene nanoribbons (AGeNRs) doped by low-concentration metallic atoms (Pt, Ag, Au, In and Sn). The structural stability and electronic properties of these doped nano-struc
Externí odkaz:
https://doaj.org/article/9fbecf8b0e6049baba3ae0e67c4e9828
Publikováno v:
Results in Physics, Vol 16, Iss , Pp 102823- (2020)
In this paper, we consider the electrical performance of a circular cross section gate all around-field effect transistor (GAA-FET) in which gate dielectric coverage with high-k dielectric (HfO2) over the channel region has been varied. Our simulatio
Externí odkaz:
https://doaj.org/article/9d09aac6516e41619e5d8b6bdda00323
Publikováno v:
Molecules, Vol 27, Iss 1, p 301 (2022)
The single electron transistor (SET) is a nanoscale switching device with a simple equivalent circuit. It can work very fast as it is based on the tunneling of single electrons. Its nanostructure contains a quantum dot island whose material impacts o
Externí odkaz:
https://doaj.org/article/c1e07c6fe9814dbabac9aea07440f514
Publikováno v:
Results in Physics, Vol 15, Iss , Pp - (2019)
This paper presents the electrical characteristics of a short channel Silicon on Insulator (SOI) transistor with a graphene layer. The graphene sheet is used at the bottom of the channel close to the source side and a proportionally heavily p-type re
Externí odkaz:
https://doaj.org/article/72ed5292a6ec48ae83c5957591593478
Autor:
Young Suh Song, Shiromani Balmukund Rahi, Chandan Kumar Pandey, Shubham Tayal, Yunho Choi, Bijo Joseph, Tripuresh Joshi, Daryoosh Dideban, Suman Lata Tripathi
Publikováno v:
Emerging Low-Power Semiconductor Devices ISBN: 9781003240778
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c035185194329f475e2ed75f5ce7199
https://doi.org/10.1201/9781003240778-10
https://doi.org/10.1201/9781003240778-10
Publikováno v:
Journal of Computational Electronics. 19:1077-1084
The influence of incorporating HfO2 as a dielectric at the drain side and a silicon stack at the source side on the electrical performance of a double-gate tunnel field-effect transistor (TFET) is investigated by comparing a conventional TFET structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5945ce10d0543a67fe24b183f68a505d
https://doi.org/10.1007/s10825-020-01497-3
https://doi.org/10.1007/s10825-020-01497-3
Publikováno v:
Silicon. 12:2733-2740
In this Research, the Effect of Source Stack Engineering on the Drive Current of a Proposed Silicon on Insulator-Tunnel FET (SOI-TFET) Is Investigated. The Proposed TFET Scheme Is Similar to a Conventional TFET, but there Is a P+ Doping Stack above t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374360ce12fc5d33b2a18a2c56444cd7
https://doi.org/10.1007/s12633-019-00371-7
https://doi.org/10.1007/s12633-019-00371-7
Acute kidney failure patients while detoxificated by hemodialysis (HD) mostly or continuously faced regular problems such as low blood pressure (hypotension), muscle cramps, nausea, or vomiting. Higher intradialytic symptom leads to low-quality HD tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbfa411885d2f8bd9fe34441456db407
https://eprints.gla.ac.uk/274287/1/274287.pdf
https://eprints.gla.ac.uk/274287/1/274287.pdf