Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Darren Hansen"'
Publikováno v:
2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm).
Thermal management is vital for the performance, reliability, and safety of electrical vehicle (EV) batteries. A proper selection of battery pack assembly materials not only enables the battery to operate in an optimal temperature window, but also he
Autor:
Jeff Quast, Ouloide Yannick Goue, Balaji Raghothamachar, Gil Yong Chung, Darren Hansen, Yu Yang, Ian Manning, Jianqiu Guo, Edward Sanchez, Michael Dudley
Publikováno v:
Journal of Crystal Growth. 452:35-38
We recently reported on the formation of overlapping rhombus-shaped stacking faults from scratches left over by the chemical mechanical polishing during high temperature annealing of PVT-grown 4H–SiC wafer. These stacking faults are restricted to r
Autor:
Darren Hansen, Gil Yong Chung, Yu Yang, Jeffrey Quast, Michael Dudley, Ian Manning, Jianqiu Guo, Edward Sanchez, Ouloide Yannick Goue, Balaji Raghothamachar
Publikováno v:
Materials Science Forum. 858:105-108
Synchrotron white beam X-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of h
Autor:
Jeffrey Quast, Ian Manning, Christopher Parfeniuk, Victor Torres, Kevin Moeggenborg, Bernd Thomas, Gil Yong Chung, Edward Sanchez, Jie Zhang, Daniel Adams, Clinton Whiteley, Darren Hansen
Publikováno v:
Materials Science Forum. 858:11-14
Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality improvements, such that key metrics match or outperform 100 mm substrates. Total dislocation densities and threadin
Autor:
Jie Zhang, Willie Bowen, Bernd Thomas, Daniel Adams, Gil Yong Chung, Victor Torres, Edward Sanchez, Darren Hansen
Publikováno v:
Materials Science Forum. 858:129-132
In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a warm-wall multi-wafer CVD system (Aixtron VP2800WW). Statistical data on doping and thickness of 25 μm to 40 μm layer growth show
Autor:
Yu Yang, Jeffrey Quast, Clinton Whiteley, Stephan G. Mueller, Darren Hansen, Ian Manning, Jianqiu Guo, Edward Sanchez, Michael Dudley, Balaji Raghothamachar
Publikováno v:
Materials Science Forum. 858:367-370
Understanding the growth and propagation of defects in SiC remains of interest in an effort to continue to improve device performance. A post-growth boule heat-treatment revealed to form micropipe pairs from apparent single screw dislocations is revi
Autor:
Jeff Quast, Gil Yong Chung, Ouloide Yannick Goue, Balaji Raghothamachar, Michael Dudley, Yu Yang, Edward Sanchez, Ian Manning, Jianqiu Guo, Darren Hansen
Publikováno v:
Journal of Electronic Materials. 45:2066-2070
Synchrotron white beam x-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of h
Autor:
Jie Zhang, Huanhuan Wang, Gilyong Chung, Yu Yang, Balaji Raghothamachar, Darren Hansen, Edward K. Sanchez, Michael Dudley, B. Thomas, Stephan G. Mueller, Jianqiu Guo
Publikováno v:
MRS Advances. 1:91-102
Interfacial dislocations (IDs) and half-loop arrays (HLAs) present in the epilayers of 4H-SiC crystal are known to have a deleterious effect on device performance. Synchrotron X-ray Topography studies carried out on n-type 4H-SiC offcut wafers before
Autor:
Eric A. Stach, Fangzhen Wu, Gil Yong Chung, Balaji Raghothamachar, Kim Kisslinger, Yu Yang, Michael Dudley, Huanhuan Wang, Mark J. Loboda, Dong Su, Stephan G. Mueller, Li Hua Zhang, Edward K. Sanchez, Darren Hansen, Jianqiu Guo
Publikováno v:
Materials Science Forum. :85-89
Synchrotron white beam x-ray topography (SWBXT), synchrotron monochromatic beam x-ray topography (SMBXT), and high resolution transmission electron microscopy (HRTEM) studies have been carried out on stacking faults in PVT grown 4H-SiC crystal. Their
Publikováno v:
Materials Science Forum. :161-164
This paper presents the current performance of 150mm SiC epitaxy on state-of-the-art 150mm substrates. Excellent on-wafer uniformity has been achieved with mean thickness uniformity at 1.8% and mean doping uniformity at 5.4%. The epilayer surface is