Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Darrell L. Miles"'
Autor:
John Sylvestri, Larry Fischer, Sweta Pendyala, Scott Dinkel, T. Kane, S.B. Ippolito, Rich Oldrey, Manuel Villalobos, Bruce J. Redder, Michael P. Tenney, Pat McGinnis, Darrell L. Miles
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper describes novel concepts in equipment and measurement techniques that integrate optical electrical microscopy and scanning probe microscopy (SPM) capabilities into a single tool under the umbrella of optical nanoprobe electrical (ONE) micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d99ae7facc8c5b65889803e1b0bd886
https://doi.org/10.31399/asm.cp.istfa2013p0208
https://doi.org/10.31399/asm.cp.istfa2013p0208
Autor:
John Sylvestri, Orazio P. Forlenza, Donato O. Forlenza, Peilin Song, Franco Stellari, Darrell L. Miles
Publikováno v:
ITC
In this paper, a new emission-based method for measuring the amplitude of on-chip power supply noise is presented. This technique uses Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC) from CMOS gates, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf57bb5b994ec663f23f3070ebacf7b4
https://doi.org/10.1109/test.2009.5355543
https://doi.org/10.1109/test.2009.5355543
Publikováno v:
SPIE Proceedings.
We present a technique that involves tailoring the angular spectrum in optical microscopy of silicon integrated circuits, with a solid immersion lens. Spatial light modulation to select only supercritical light at the substrate/dielectric interface,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662735072bc344885bf9b60363d91fcf
https://doi.org/10.1117/12.806545
https://doi.org/10.1117/12.806545
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
In this paper, we present for the first time the use of an optical imaging technique that we have developed to map systematic and random variability effects across several phases of development of a new microprocessor chip fabricated with the latest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49769768ba5c9629c06ac2ac2a212932
https://doi.org/10.1109/irps.2009.5173323
https://doi.org/10.1109/irps.2009.5173323
Publikováno v:
Applied Physics Letters. 92:101109
A structure for locating a fault in a semiconductor chip. The chip includes a substrate on a dielectric interconnect. A first electrical response image of the chip, which includes a spot representing the fault, is overlayed on a first reflection imag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d309a15bc5f9da36351a49d5246ae143
https://doi.org/10.1063/1.2892656
https://doi.org/10.1063/1.2892656