Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Darrell G. Hill"'
Autor:
J. Abdou, M. CdeBaca, Bruce M. Green, M. Miller, Haldane S. Henry, C-L. Liu, Darrell G. Hill, Olin L. Hartin, Charles E. Weitzel, Karen E. Moore, F. Clayton, J. Selbee
Publikováno v:
2008 IEEE MTT-S International Microwave Symposium Digest.
This report presents the DC, pulsed I–V, small signal, and large signal characteristics of Freescale’s 48 V GaN HFET technology. Characterization of large signal performance for a 12.6 mm at 48V drain bias shows 89 W output power with an associat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d74d5a7283e2c0a9a7b257a81403383
https://doi.org/10.1109/mwsym.2008.4632916
https://doi.org/10.1109/mwsym.2008.4632916
Publikováno v:
MRS Proceedings. 863
Electromigration tests were performed on passivated electroplated Au four terminal Kelvin line structures using the conventional in situ resistance monitoring technique. The stress conditions were a current density of 2.0 MA/cm2 with ambient temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f391aaf59dca6b84c4fff251167cc54
https://doi.org/10.1557/proc-863-b8.30
https://doi.org/10.1557/proc-863-b8.30
Autor:
Hin-Fai Chau, Darrell G. Hill, T. Henderson, D. Costa, T.S. Kim, Wen-Chau Liu, A. Khatibzadeh
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
We report on the performance of carbon-doped heterojunction bipolar transistors (HBTs) bias stressed at elevated temperatures. We have determined that in devices without a thin passivating layer of AlGaAs covering the extrinsic base, a tunneling-reco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab302cb148038edc3996a842acf3a822
https://doi.org/10.1109/iedm.1994.383434
https://doi.org/10.1109/iedm.1994.383434
Autor:
Darrell G. Hill, H. Henry, Manoj Nair, Scott Kiefer, S. Mitra, Mariam G. Sadaka, Paul W. Sanders, M. Sutton, Syd R. Wilson, John W. Steele
Publikováno v:
International Symposium for Testing and Failure Analysis.
Visible to infra-red photon emissions can be readily observed in compound semiconductor devices through the semi-insullating substrate and are useful in fault identification when analyzing yield problems. The techniques described here have uncovered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::049a3f974859e62ad8ce72d7ee946416
https://doi.org/10.31399/asm.cp.istfa2002p0173
https://doi.org/10.31399/asm.cp.istfa2002p0173
Publikováno v:
Journal of Fluency Disorders. 25:187
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68bd7e83f8b7634885f71ed857f87ac9
https://doi.org/10.1016/s0094-730x(00)80213-2
https://doi.org/10.1016/s0094-730x(00)80213-2
Publikováno v:
2006 7th International Symposium on Antennas, Propagation & EM Theory; 2006, p1-4, 4p
Publikováno v:
JEDEC ROCS Workshop, 2004; 2004, p21-31, 11p
Publikováno v:
GaAs Reliability 2002 Workshop; 2002, p167-174, 8p
Publikováno v:
IEEE Transactions on Electron Devices; 1993, Vol. 40 Issue 11, p1917-1927, 11p
Publikováno v:
IEEE Microwave & Guided Wave Letters; 1993, Vol. 3 Issue 2, p45-47, 3p