Zobrazeno 1 - 10
of 239
pro vyhledávání: '"Darlington transistor"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Mehboob Ul Amin, Priyanka Mishra
Publikováno v:
ICT Express, Vol 7, Iss 2, Pp 234-238 (2021)
In this letter a new detection scheme combining the conventional Sphere decoders and K best detection algorithm is proposed. This algorithm leverages the Sphere decoder (SD) results to use smaller values of K in K best algorithm to achieve better per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5c1e82a4a472b71122b5d51b26abbe6
http://www.sciencedirect.com/science/article/pii/S2405959520301934
http://www.sciencedirect.com/science/article/pii/S2405959520301934
Publikováno v:
Procedia Computer Science. 183:493-503
Scheduling vehicles at multiple intersections remain an issue of concern in road traffic control. Traffic lights have been widely employed in many countries, however, determining the best intersection to grant access to using the number of vehicles p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63ae95d5c8fb219b75f4909b6b5ae406
https://doi.org/10.1016/j.procs.2021.02.089
https://doi.org/10.1016/j.procs.2021.02.089
Publikováno v:
Analog Integrated Circuits and Signal Processing. 105:441-457
This paper presents a novel co-optimization configuration to simultaneously improve phase noise and FoM in order to solve the long-existing issue of excellent phase noise and mediocre FoM in the light of GaAs technologies. Considering traditional GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8acbbfdc15b2628a38e6361279eabde0
https://doi.org/10.1007/s10470-020-01725-7
https://doi.org/10.1007/s10470-020-01725-7
Publikováno v:
IEEE Electron Device Letters. 41:888-891
In this letter, a new structure of Insulated Gate Bipolar Transistor (IGBT) with lateral variation doping concept in epitaxial region is presented. In the drift region, the lateral variation doping profile acts as a parasitic wide base $\textit {pnp}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2e789451bee4215f39bd8c28b439e8f
https://doi.org/10.1109/led.2020.2986941
https://doi.org/10.1109/led.2020.2986941
Autor:
Yang Liu, Wenqiang Song, Fei Hou, Qingsa Li, Feibo Du, Jizhi Liu, Xuanlin Xiong, Juin J. Liou, Zhiwei Liu
Publikováno v:
IEEE Transactions on Electron Devices. 67:1353-1356
In this brief, two novel diode-triggered silicon-controlled rectifiers (DTSCRs) with fast turn-on speed have been presented. By embedding current gain amplifier modules (i.e., Sziklai pair and Darlington pair) into the conventional DTSCR, the current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a1125b611a395459e0812964371d520
https://doi.org/10.1109/ted.2020.2965092
https://doi.org/10.1109/ted.2020.2965092
Autor:
Min-Su Kim, Hee-Sauk Jhon
Publikováno v:
Electronics, Vol 10, Iss 2678, p 2678 (2021)
Electronics
Volume 10
Issue 21
Electronics
Volume 10
Issue 21
This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. To ens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2d662f89cdc4c468c16233de779dc5f
https://www.mdpi.com/2079-9292/10/21/2678
https://www.mdpi.com/2079-9292/10/21/2678
Publikováno v:
2021 2nd International Conference on Smart Electronics and Communication (ICOSEC).
Every day, the development of embedded systems accelerates, and new and innovative solutions have also been generated to the existing challenges.. An embedded system is system that assists the manipulation of data or information. Any embedded inventi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4409348a6ed2ea1d0ee31a879763be2a
https://doi.org/10.1109/icosec51865.2021.9591702
https://doi.org/10.1109/icosec51865.2021.9591702
Autor:
SachchidaNand Shukla
Two different circuit models of small-signal amplifiers are developed using PSpice-defined identical N-channel commercial power MOSFETs in Darlington pair topology. Proposed circuits are also tested with the user-defined PSpice models of matched N-ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be4fa27b9c12bcf75f1be10efc24731a
https://doi.org/10.9734/bpi/naer/v9/11460d
https://doi.org/10.9734/bpi/naer/v9/11460d
Publikováno v:
Physical Review B. 104
Recent progress in manipulating individual quantum systems has led to the development of quantum thermal transistors, which control the thermal conductivity between two of its terminals according to an input signal on its third terminal. With several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b414f20a0443338be0d07b13bfbcf06f
https://doi.org/10.1103/physrevb.104.045405
https://doi.org/10.1103/physrevb.104.045405