Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Darlene M. Udoni"'
Autor:
Paiboon Tangyunyong, Joshua Beutler, Biliana S. Paskaleva, Edward I. Cole, Guillermo M. Loubriel, Thomas E. Buchheit, Darlene M. Udoni
Publikováno v:
International Symposium for Testing and Failure Analysis.
We present a new, non-destructive electrical technique, Power Spectrum Analysis (PSA). PSA as described here uses off-normal biasing, an unconventional way of powering microelectronics devices. PSA with off-normal biasing can be used to detect subtle
Autor:
Darlene M. Udoni, Mary A. Miller
Publikováno v:
International Symposium for Testing and Failure Analysis.
This work outlines a case study of charge-induced damage to SOI wafers that caused gate leakage in discrete transistors and static leakage in packaged integrated circuits (ICs). The consequential yield fallout occurred primarily at wafer center. Elec
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper presents two different case studies that highlight the use of reflected light imaging in laser scanning microscopy. In the first case study, the exact location of defects in metal comb test structures were much easier to detect with reflec
The theme for the November 2017 conference was Striving for 100% Success Rate. Papers focus on the tools and techniques needed for maximizing the success rate in every aspect of the electronic device failure analysis process.
This title features the latest research and practical data from the premier event for the microelectronics failure analysis community. The papers cover a wide range of testing and failure analysis topics of practical value to anyone working to detect