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pro vyhledávání: '"Darlene M. Brake"'
Publikováno v:
Journal of Applied Physics. 75:2952-2956
Very high purity n‐type GaAs epilayers were grown by low pressure metalorganic chemical vapor deposition using triethylgallium and tertiarybutylarsine (TBA) or arsine (AsH3). Peak Hall mobilities of 209 000 cm2/V s at 45 K were observed for growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de72c83521c1c2323a3b73d18fe0e961
https://doi.org/10.1063/1.356191
https://doi.org/10.1063/1.356191
