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Autor:
Thomas Rueckes, Glen Rosendale, Sohrab Kianian, Monte Manning, X. M. Henry Huang, Darlene Hamilton, Karl Robinson, Young Weon Kim
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
A 4Mbit nonvolatile memory with a Carbon Nanotube (CNT) storage element has been manufactured in a 0.25 µm CMOS process at a production fab. The CNT storage element is integrated in BEOL, requires minimal additional processing steps, and only a sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53669a77a8cbe2e8a87c5c95e48214a0
https://doi.org/10.1109/essderc.2010.5618198
https://doi.org/10.1109/essderc.2010.5618198
