Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Darko Trivkovic"'
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64e07d858b4ead55a5928baee325a159
https://doi.org/10.1117/12.2658866
https://doi.org/10.1117/12.2658866
Autor:
Ana-Maria Armeanu, Evgeny Malankin, Neal Lafferty, Chih-I Wei, Monica Sears, Germain Fenger, Xima Zhang, Werner Gillijns, Darko Trivkovic, Ryan Ryoung-Han Kim, Jeonghoon Lee
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26bcdac1d8e4e6ad2b2124783443191d
https://doi.org/10.1117/12.2660413
https://doi.org/10.1117/12.2660413
Publikováno v:
DTCO and Computational Patterning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2108a37dce962c311d45445e2d21a8ad
https://doi.org/10.1117/12.2617415
https://doi.org/10.1117/12.2617415
Autor:
Geert Hellings, Alessio Spessot, Jane Wang, R. H. Kim, Gioele Mirabelli, Darko Trivkovic, Julien Ryckaert, Kurt G. Ronse, Pieter Weckx
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
The continued need to satisfy the Power-Performance-Area requirements in advanced technologies resulted in a steady and rapid increase in manufacturing costs in the last years. Indeed, novel process integration schemes can require advanced tools and/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a619aaceeba9d741c3579eb4fd84367
https://doi.org/10.1117/12.2600804
https://doi.org/10.1117/12.2600804
Autor:
Youssef Drissi, Amit Dounde, Syed Muhammad Yasser Sherazi, Werner Gillijns, Ryoung-han Kim, Darko Trivkovic
Publikováno v:
Photomask Technology 2019.
With the advent of Multi-beam mask writers, curvilinear shapes are being realized with comparable metrics to Manhattan shapes when it comes to write times which has been the main issue with conventional VSB mask writers. Techniques like PLDC also enh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ee0a43166ccd6e503d98c221d12ecc
https://doi.org/10.1117/12.2536899
https://doi.org/10.1117/12.2536899
Autor:
N. A. Thiam, Johan Swerts, Laurent Souriau, Darko Trivkovic, Christopher J. Wilson, Monique Ercken, Eline Raymenants, K. Babaei Gavan, Nouredine Rassoul, J. Jussot, Iuliana Radu, Danny Wan, Sebastien Couet
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
In this paper, patterning challenges that led to the fabrication of a first Spin Torque Majority Gate (STMG) device are explored. We have highlighted key process module developments from the Magnetic Tunnel Junctions (MTJs) pillar patterning to dual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af54460d1036bc9ad5cab433b5ba0c8d
https://doi.org/10.1117/12.2515086
https://doi.org/10.1117/12.2515086
Publikováno v:
ICCD
The aggressive scaling towards N5 causes the difficulty in controlling process variations for line and block (cut) printing, while the margin for edge placement errors (EPE) is decreasing. Selective etching, implemented by self-aligned multiple patte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e68efe870334a5665ceb5d131c7295
https://doi.org/10.1109/iccd.2017.72
https://doi.org/10.1109/iccd.2017.72
Autor:
Victor M. Blanco Carballo, Rudi De Ruyter, Kurt G. Ronse, Stephane Lariviere, Youssef Drissi, Werner Gillijns, Darko Trivkovic, G. McIntyre, Ryoung-han Kim, Jae Uk Lee, Patrick P. Naulleau, Ling Ee Tan, Morin Dehan, Toshiro Itani, Paolo A. Gargini
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
imec’s investigation on EUV single patterning insertion into industry 5nm-relevant logic metal layer is discussed. Achievement and challenge across imaging, OPC, mask data preparation and resulting wafer pattern fidelity are reported with a broad s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075bf801d72244598c9c8fcedf140be1
https://doi.org/10.1117/12.2281738
https://doi.org/10.1117/12.2281738
Autor:
Victor Blanco, Greg McIntyre, Ling Ee Tan, Joost Bekaert, Praveen Raghavan, Ryoung-han Kim, Darko Trivkovic, Peter Debacker, Youssef Drissi, J. Ryckaert, Ming Mao, Stephane Lariviere, Yasser Sherazi, Werner Gillijns
Publikováno v:
SPIE Proceedings.
imec’s DTCO and EUV achievement toward imec 7nm (iN7) technology node which is industry 5nm node equivalent is reported with a focus on cost and scaling. Patterning-aware design methodology supports both iArF multiple patterning and EUV under one c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e74d40244a22818985246a3f60e090
https://doi.org/10.1117/12.2257885
https://doi.org/10.1117/12.2257885
Autor:
Victor Blanco, Ling Ee Tan, R. H. Kim, Emily Gallagher, G. McIntyre, Darko Trivkovic, Werner Gillijns, Youssef Drissi
Publikováno v:
SPIE Proceedings.
The imec N7 (iN7) platform has been developed to evaluate EUV patterning of advanced logic BEOL layers. Its design is based on a 42 nm first-level metal (M1) pitch, and a 32 nm pitch for the subsequent metal layers1. With these pitches, the iN7 node
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520b7fb2d2bd3f80fcd2c52d0ccc9999
https://doi.org/10.1117/12.2258003
https://doi.org/10.1117/12.2258003