Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Dario Tenaglia"'
Autor:
Massimo D. Pirnaci, Luca Spitaleri, Dario Tenaglia, Francesco Perricelli, Maria Elena Fragalà, Corrado Bongiorno, Antonino Gulino
Publikováno v:
ACS Omega, Vol 6, Iss 31, Pp 20667-20675 (2021)
Externí odkaz:
https://doaj.org/article/029126d893e240f2b3a46abdbe9dad6b
Autor:
Markus Italia, Ioannis Deretzis, Alfio Nastasi, Silvia Scalese, Antonino La Magna, Massimo Pirnaci, Daniele Pagano, Dario Tenaglia, Patrizia Vasquez
Publikováno v:
Materials Science Forum. 1062:214-218
Manufacturing of Silicon Carbide (SiC) based devices will soon require the accuracy and control typical of the advanced Si based nanoelectronics. As a consequence, the processes development will surely benefit of technology computer aided design (TCA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ee4a116562c188f2e80ad016ebeb544
https://doi.org/10.4028/p-n9v122
https://doi.org/10.4028/p-n9v122
Autor:
Luca Spitaleri, Francesco Perricelli, Massimo D Pirnaci, Dario Tenaglia, Maria Elena Fragalà, Corrado Bongiorno, Antonino Gulino
Publikováno v:
ACS Omega, Vol 6, Iss 31, Pp 20667-20675 (2021)
ACS Omega
ACS Omega
Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a614d1c4b4af15829077dca12e1b6b31
https://doi.org/10.1021/acsomega.1c02905
https://doi.org/10.1021/acsomega.1c02905