Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Dario Maradan"'
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
Autor:
Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, Friedhard Römer, Dario Maradan, Matteo Meneghini, Andrey Bakin, Frank Hohls, Hans Werner Schumacher, Bernd Witzigmann, Andreas Waag, Hutomo Suryo Wasisto
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-11 (2019)
Abstract This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e.,
Externí odkaz:
https://doaj.org/article/cb21572995a7431785e864b86686240e
