In-line advanced process control solution for the fabrication of micro-bumps

Autor: Astrid Sippel, Cleonisse Serrecchia, Tristan Combier, Dario Alliata, Stephane Godny, Philippe Gastaldo

Publikováno v: International Symposium on Microelectronics. 2017:000087-000092

In this paper, Confocal Chromatic Microscopy was investigated to characterize the micro-bump fabrication process. We designed and fabricated in house a new detector that integrates through the same optical chromatic lens two light beams that are refl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8b1de22d488c913a8bc5166e75802a4
https://doi.org/10.4071/isom-2017-tp35_025

Optical profilometry and AFM measurements comparison on low amplitude deterministic surfaces

Autor: M. Abdel sater, S. Petitgrand, Dario Alliata, C. Beitia, M. Cordeau, S. Godny

Publikováno v: 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

Surface nanotopography is important for different key advanced process steps (CMP, Bonding, Epitaxy…). However, its characterization needs data at all scales from wafer to devices. In addition in today advanced processes, roughness and deterministi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e1c41492e80ea55be41ffc2b3052d42
https://doi.org/10.1109/asmc.2019.8791802

Progress in OCT-based Through Silicon Via (TSV) metrology

Autor: J-P. Hugonin, Pierre Chavel, Dario Alliata, Christophe Sauvan, Mondher Besbes, E. Herth, G. Vienne, P. Coste, Alain Bosseboeuf, W. A. Iff, L. Milord

Publikováno v: Frontiers in Optics 2019
Frontiers in Optics
Frontiers in Optics, 2019, Washington, United States. pp.JW4A.115, ⟨10.1364/FIO.2019.JW4A.115⟩

International audience; We report on progress in Time-Domain OCT (optical coherence tomography) applied to TSV (vertical interconnect accesses in silicon, enabling stacking of devices). Transitioning from the common scalar approach to an electromagne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1dcff20d2b96d822c476f8cd586b9ac8
https://hal.archives-ouvertes.fr/hal-02343398/document

Disclosing the Early Stages of Electrochemical Anion Intercalation in Graphite by a Combined Atomic Force Microscopy/Scanning Tunneling Microscopy Approach

Autor: Matteo Tommasini, Franco Ciccacci, Paolo Biagioni, Gianlorenzo Bussetti, Matteo Passoni, Lamberto Duò, Rossella Yivlialin, Dario Alliata, Carlo Spartaco Casari, Andrea Bassi, Chiara Castiglioni

Publikováno v: The Journal of Physical Chemistry C. 120:6088-6093

In view of large-scale applications, electrochemical exfoliation of graphite for the production of graphene sheets must follow chemical processes that ensure high quality of the products—wide-size graphene foils, single- or few-layer thickness, and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c693852d1cccd8602a89859eeeea7355
https://doi.org/10.1021/acs.jpcc.6b00407

Through silicon via process characterization by integrated inspection/metrology solutions in visible and infrared domain

Autor: Dario Alliata, Nicolas Devanciard, Darcy Hart, Stephane Minoret, Prasad Bachiraju, John Thornell, Stephane Rey, David S. Marx, Carlos Beitia, Russ Dudley, Thomas Magis

Publikováno v: 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

In this paper, we present an integrated in-line solution, combining automatic visual inspection/classification with unique 2D/3D measurement technologies, which was used to characterize the defectivity and the morphology of open through silicon via (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c67e5534d4e0823e0cce0a1be2a040eb
https://doi.org/10.1109/asmc.2015.7164457